FP15R06W1E3B11BOMA1 Allicdata Electronics
Allicdata Part #:

FP15R06W1E3B11BOMA1-ND

Manufacturer Part#:

FP15R06W1E3B11BOMA1

Price: $ 20.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 22A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FP15R06W1E3B11BOMA1 datasheetFP15R06W1E3B11BOMA1 Datasheet/PDF
Quantity: 1000
24 +: $ 18.46130
Stock 1000Can Ship Immediately
$ 20.31
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Power - Max: 81W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 830pF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FP15R06W1E3B11BOMA1 module is a part of the IGBT family of transistors, which stands for Insulated Gate Bipolar Transistors. IGBTs are mainly used because of their voltage handling capabilities and high-speed switching performance.

IGBTs are widely used in applications such as high-voltage inverters, motor drives and power supplies, switched-mode power supplies, high voltage DC-DC converters, UPS systems and electric vehicle systems. They have also gained popularity in many other fields such as power grid systems, renewable energy sources, consumer electronics and others.

Working Principle

The main working principle of IGBTs relies on their insulated gate structure. The gate is insulated from the main conductor, or the drain, by a thin dielectric layer. This insulation is designed to ensure that the gate is not affected by the drain current and will only be affected by the gate voltage.

The typical IGBT structure consists of two layers of highly doped semiconductors. The first layer is heavily doped with N-type material and the second layer is heavily doped with P-type material. When the gate voltage is applied to the N-type layer, an electric field is created. This electric field will induce a migration of negative carriers (holes) to the P-type layer, resulting in a P-N junction.

When this P-N junction is fully formed, current is allowed to flow from the collector to the emitter. The current will then be controlled by the gate voltage. By increasing the gate voltage, more holes are migrated and more current will flow, resulting in the IGBT increasing its conductance. The same can be done with the gate voltage being decreased for decreasing the conductance.

Application Field

The FP15R06W1E3B11BOMA1 module is primarily used in high voltage applications, such as motor drives and power supplies, switched-mode power supplies, high voltage DC-DC converters, UPS systems and electric vehicle systems. It’s also used in power grid systems, renewable energy sources, consumer electronics and others.

This module is an ideal choice when dealing with high power demands, as it is able to handle up to 15A of collector current. It is also able to operate at a wide range of frequencies, making it suitable for applications such as motor drives and power supplies where high switching frequencies are required.

It is also an excellent choice for power management in applications such as high voltage inverters and switched-mode power supplies, as it is able to handle large voltages (up to 600V) and is also able to switch quickly.

The FP15R06W1E3B11BOMA1 is also an excellent choice for electric vehicles, as it can provide efficient operation and handle the high current demands of electric motors. It is also able to handle the high switching frequencies required for rapid control of the electric motors.

In addition, the FP15R06W1E3B11BOMA1 is also a good choice for renewable energy sources, as it can provide efficient operation and be easily integrated into new applications. It can also be used in consumer electronics, as it is able to handle high frequencies and provides good power efficiency.

Conclusion

The FP15R06W1E3B11BOMA1 module is a part of the IGBT family of transistors and is primarily used in high voltage applications. It has the ability to handle up to 15A of collector current and is also capable of operating at a wide range of frequencies, making it suitable for applications such as motor drives and power supplies. It is also an excellent choice for electric vehicle systems and for renewable energy sources, as it can provide efficient operation and be easily integrated into new applications.

The specific data is subject to PDF, and the above content is for reference

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