FP15R06W1E3BOMA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	22A
Power - Max:	81W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 15A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	830pF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction

The FP15R06W1E3BOMA1 is an IGBT module that serves as a high power switch in a range of application fields. It is designed for use in the control of high power consumer goods, including motors, lights, and appliances, and is used in a variety of industries including automotive, consumer electronics, and industrial automation. This module provides better performance compared to traditional thyristors and other semiconductor elements. In this article we will discuss the application field and working principle of the FP15R06W1E3BOMA1.

Application Field

The FP15R06W1E3BOMA1 IGBT module is used in a variety of consumer electronics, motors, lights, and appliances. It is commonly used in automotive applications due to its high power capabilities. It is also used in the industrial automation field, in order to control high-power motors and other systems. The FP15R06W1E3BOMA1 is capable of handling high-power loads, and is often used in applications where there is a need for high power control, such as motor drives. It is also suitable for controlling high current loads, and is often used in applications such as HVAC systems, power supply systems, and solar power systems. In addition to its ability to handle high-power applications, the FP15R06W1E3BOMA1 has several advantages over traditional thyristors and other semiconductor elements. It is capable of higher efficiency and a lower on-state resistance, resulting in significant power savings. Furthermore, it has a low switching noise, wide frequency range, and a high peak current capability.

Working Principle

The FP15R06W1E3BOMA1 IGBT module is based on the principle of power metal oxide semiconductor field-effect transistor (MOSFET). It consists of four opposed MOSFETs, connected in parallel to form a full-bridge configuration, with each device controlled by its own driver which provides independent control of each transistor. When a voltage is applied across the external terminals of the module, it may allow or block current flow, depending on the input voltage. When a positive voltage is applied to the gate, current will flow through the IGBT and the module will switch on. When the gate is driven to a more negative voltage, current flow will be blocked and the module will switch off. The module also has an inhibit function which is used to inhibit all the internal switches at a common terminal. This inhibits the IGBT from switching on and allows for a safe shut down of the power supply system.

Conclusion

The FP15R06W1E3BOMA1 is an IGBT module designed for high power control in a variety of applications. It is capable of handling high current loads, and provides better performance compared to traditional thyristors and other semiconductor elements. It is based on the principle of MOSFET, and consists of four opposed MOSFETs connected in parallel. This module has several advantages over traditional thyristors, including higher efficiency, low on-state resistance, and a low switching noise. It can also be used in a variety of industries, including automotive, consumer electronics, and industrial automation.

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