Allicdata Part #: | FP35R12KT4B16BOSA1-ND |
Manufacturer Part#: |
FP35R12KT4B16BOSA1 |
Price: | $ 69.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-4 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP35R12KT4B16BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 63.11650 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 70A |
Power - Max: | 210W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 35A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
FP35R12KT4B16BOSA1 is a high-power Reliability-Optimized IGBT module developed by ABB and it is categorized into the Transistors - IGBTs - Modules family. It is designed to provide the highest power capabilities along with outstanding reliability in all applications.
Application Field
FP35R12KT4B16BOSA1 can be used in a wide range of applications, such as traction and elevator inverters, solar/wind converters, UPS and Generators, Robot power stage, Heavy-duty industrial inverters, etc. It can also be used in any consumer electronics appliance which involves high power applications.
Working Principle
FP35R12KT4B16BOSA1 is built using the state-of-the-art IGBT technology. It works by allowing current to pass through a metal oxide semiconductor (MOS) layer. This MOS layer acts like a switch, and can be turned on or off, depending on the amount of voltage applied. When the MOS is turned on, current flows from the collector to the emitter and when the MOS is turned off, current flow is blocked. This makes it possible for FP35R12KT4B16BOSA1 to control the amount of current passing through it. This is the fundamental principle behind IGBT and how it works.
Advantages
FP35R12KT4B16BOSA1 provides several advantages over traditional transistors and other IGBT modules. It has a low switching loss. It also has a higher switching frequency, which makes it suitable for applications with high power requirements. It also allows for soft switching, reducing the switching loss. Additionally, it is highly scalable and has a long life cycle, making it suitable for long-term applications.
Conclusion
FP35R12KT4B16BOSA1 is a reliable and highly efficient IGBT module designed to provide high power capabilities for a variety of applications. It uses advanced IGBT technology which allows for low switching loss and high switching frequency, making it suitable for applications with high power requirements. Additionally, it has a long life cycle, making it suitable for long-term applications.
The specific data is subject to PDF, and the above content is for reference
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