FP35R12KT4PBPSA1

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The FP35R12KT4PBPSA1 is an Ultrafast field power module developed by Infineon Technologies AG. It is a type of IGBT module that is used for applications requiring high power, high switching frequency, and high output current. The FP35R12KT4PBPSA1 features a robust package design and high thermal management capability. The device is available in surface mount and through-hole versions.

The FP35R12KT4PBPSA1 is a power module based on Infineon\'s Ultrafast HiperFET TM process. This device is a medium voltage, high current IGBT module suitable for applications including motor drives, welding, server power supply, industrial machinery, and medium/high power renewable energy inverters. The FP35R12KT4PBPSA1 module provides a fast switching speed, low power losses, and high short circuit capability. Additionally, the device is easy to use and incorporates a built-in snubber for overcurrent protection.

The working principle of the FP35R12KT4PBPSA1 module is that when the gate voltage is applied, current carriers are generated in the substrate of the IGBT device. This current creates an electrostatic field that attracts charge carriers from the P-type layer into the N-type layer, where they are held by the electric field. This creates a conducting channel between the source and drain of the device, allowing current to flow across the device. When the gate voltage is removed, the conducting channel is extinguished, and the current is shut off.

The FP35R12KT4PBPSA1 is a versatile device which can be used in a wide variety of applications. It is exceptionally suitable for motor drive applications due to its fast switching speed, low power losses, and high short circuit protection capability. Additionally, the FP35R12KT4PBPSA1 is also an ideal solution for UPSs, server power supplies, industrial machinery, and renewable energy inverters. Furthermore, the device is suitable for applications requiring high efficiency and high power density.

In summary, the FP35R12KT4PBPSA1 is a versatile power module developed by Infineon Technologies AG. It is a medium voltage, high current IGBT module suitable for applications requiring high power, high switching frequency, and high output current. The device is based on Infineon\'s Ultrafast HiperFET TM process and is designed for applications such as motor drives, welding, server power supplies, industrial machinery, and renewable energy inverters. The working principle of the device is that when the gate voltage is applied, current carriers are generated creating an electrostatic field that attracts charge carriers and forms a conducting channel between the source and drain of the device. When the gate voltage is removed, the conducting channel is extinguished and the current is shut off.

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