FP35R12W2T4PBPSA1

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The FP35R12W2T4PBPSA1 is a type of module containing an insulated gate bipolar transistor (IGBT), which is a type of power semiconductor device that combines the features of both an insulated gate field effect transistor (MOSFET) and a bipolar transistor. This combination makes it more efficient and functional in many applications compared to the other two types of transistors.

The FP35R12W2T4PBPSA1 is a fourth-generation IGBT module designed to meet the increasing needs for efficiency and performance of electrical systems. It offers tremendous performance outcomes in various application fields such as medium-power motor drives, industrial, lighting, and home appliances. It is also able to provide excellent heat dissipation versus cost ratio up to 12 kW.

The integrated circuit of the FP35R12W2T4PBPSA1 consists of two IGBTs, two fast-recovery anti-parallel diodes, and a gate driver IC. The two IGBTs are engineered on a direct copper bond (DCB) substrate, which is a highly thermally conductive material offering outstanding cooling efficiency. It operates at a nominalvoltage of 1200V, a collector current of 75A, and a short circuit withstand time of 8μs.

The FP35R12W2T4PBPSA1 module is designed with a very low gate charge, making it suitable for PWM applications, such as motor drives, power supplies and solar power systems. When enabled, the IGBT\'s gate presents a low-impedance path between the source and drain, allowing current to flow. On the other hand, when disabled, the gate offers a high resistance, effectively blocking current flow and stopping any associated voltage drops.

The integrated fast recovery anti-parallel diodes in the FP35R12W2T4PBPSA1 module protect it against short circuit events, such as fast transients, like those seen in motor drives and other industrial applications. They are also fast and reliable, capable of switching the currents at high frequency and very high current rates.

In-circuit protection and monitoring of the FP35R12W2T4PBPSA1 module is supported by a gate driver IC. It monitors the system by sensing the temperatures and voltages so that the IGBTs won’t be over stressed. The IC also provides high current pulse paths from the control line to the IGBT gates so that the module can switch quickly and reliably.

In conclusion, the FP35R12W2T4PBPSA1 module is a fourth-generation IGBT module designed for use in a variety of applications, such as medium-power motor drives, industrial, lighting, and home appliances. The integrated IGBTs, fast-recovery anti-parallel diodes, and a gate driver IC enable it to perform efficiently and reliably. In addition, the module offers high heat dissipation efficiency and low gate charge, making it suitable for PWM applications.

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