FP50R07N2E4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FP50R07N2E4B11BOSA1-ND

Manufacturer Part#:

FP50R07N2E4B11BOSA1

Price: $ 52.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 50A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FP50R07N2E4B11BOSA1 datasheetFP50R07N2E4B11BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 47.63180
Stock 1000Can Ship Immediately
$ 52.4
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 3.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FP50R07N2E4B11BOSA1 is a Type FP50 IGBT Module, primarily used in inverter drives and UPS systems.

Its design is intended to help create a robust and reliable power solution, with a series of features supporting this. It includes a thin wafer-based chip with a fast switching speed, appropriate for PWM applications. Its external diode module also allows for current sharing applications. Its ability to handle high current operation also allows it to be suitable for industrial applications.

In its basic role, the FP50R07N2E4B11BOSA1 is used as a power switch. It functions as an electronically controlled current source, allowing for greater switchable loads with reduced power loss compared to mechanical options. To do so, it uses a PrimePACK IGBT module; this module works by utilizing the characteristics of an IGBT transistor to control the flow of electrons.

In contrast to a normal transistor, the IGBT features an insulated gate. This gate, when energized, creates an electric field that attracts a flow of electrons. With this electric field in place, electrons can move, allowing a certain current to flow. With the right design, the voltage or current can be controlled, as required.

The PrimePACK IGBT module utilizes the IGBT transistors\' speed and power capabilities, in combination with a fast-switching and laminated insulated gate, to create the necessary control. This insulated gate also helps to improve the power efficiency of the switch itself.

The FP50R07N2E4B11BOSA1 module also includes a number of other features helping to increase its efficiency. These include a p-channel IGBT, allowing for a high-speed and low-current output, and several protection features. These features help to ensure that the device operates in a reliable and safe manner, even at high power.

The FP50R07N2E4B11BOSA1 has a range of potential applications outside of its original use in UPS systems and inverters. IGBTs are often used in solar power applications, including solar inverters and other photovoltaic drives. They can also be used in electric motors, especially for high power and high speed applications. The module can be used for other high power applications, such as in welding and plasma cutting equipment.

In conclusion, the FP50R07N2E4B11BOSA1 is a powerful, reliable and efficient IGBT module that is suitable for a range of applications. It can be used in UPS systems and inverter drives, as well as in solar inverters, electric motors and other high power applications. It features a fast-switching and laminated insulated gate, as well as a number of protection features, which help it to function reliably and efficiently.

The specific data is subject to PDF, and the above content is for reference

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