Allicdata Part #: | FP50R12KE3BOSA1-ND |
Manufacturer Part#: |
FP50R12KE3BOSA1 |
Price: | $ 81.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 50A |
More Detail: | IGBT Module NPT Single 1200V 75A 280W Chassis Moun... |
DataSheet: | FP50R12KE3BOSA1 Datasheet/PDF |
Quantity: | 2 |
1 +: | $ 74.39040 |
Series: | * |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 280W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 50A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 3.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FP50R12KE3BOSA1 is one of the most popular module transistors in the IGBT market. This type of IGBT offers both high power efficiency and excellent power switching capability, making it suitable for a wide range of applications. It is a very reliable and efficient solution for power conversion and free-wheeling needs. In this article, we will be discussing the applications and working principles of FP50R12KE3BOSA1.
Firstly, let’s discuss the application field of this IGBT. The FP50R12KE3BOSA1 module is mainly used in high-end industrial machine and power electronic applications, including automotive, medical, communication and industrial motor drive systems. Moreover, the FP50R12KE3BOSA1 is also suitable for Uninterruptible Power Supply (UPS) and other high power, fast switching frequency applications. Its power dissipation capability is able to deliver up to 4 stages switching, which is ideal for drives requiring higher switching speed.
The FP50R12KE3BOSA1’s high power efficiency is achieved through its asymmetrical channels, which enable the IGBT to conduct high current without carrying high static losses. It’s RDS(on) values are quite low, dynamic switching losses and switching noise. The IGBT also contains a module isolator (MIS) to reduce the dynamic losses, which improving its efficiency and reliability. The FP50R12KE3BOSA1 also comes with a temperature sensor to detect the junction temperature and hence allowing for overcurrent protection.
In terms of working principle, the FP50R12KE3BOSA1 module is a static device, which utilizes the effects of the bipolar junction transistor being promoted when passing current in the forward direction. When current is passed in the reverse direction, the IGBT behaves like a non-conductive non-conductive isolated structure. Therefore, the FP50R12KE3BOSA1 is an ideal switch for applications requiring fast switching times and high power. The IGBT also offers low power consumption, which makes the IGBT an ideal choice for applications demanding high power efficiency.
The FP50R12KE3BOSA1 is an excellent solution for applications that require reliable, fast and efficient power conversion. It offers excellent switching capabilities, low static and dynamic power losses and low power consumption, making it suitable for a wide range of industrial applications. Therefore, the FP50R12KE3BOSA1 is the ideal choice for automotive, medical, communication and industrial motor drive systems, as well as Uninterruptible Power Supply (UPS) and other high power, fast switching frequency applications.
The specific data is subject to PDF, and the above content is for reference
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