Allicdata Part #: | FP50R07U1E4BPSA1-ND |
Manufacturer Part#: |
FP50R07U1E4BPSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 50A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP50R07U1E4BPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 230W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
The FP50R07U1E4BPSA1 is an Intelligent Power Module (IPM) from Fairchild Semiconductor. This module combines a high-performance IGBT transistor and a fast-recovery diode and is specifically designed for high-power switching applications. It is suitable for a variety of power control applications such as motor control, solar inverters, welding machines, air-conditioners and more.
Application Field
The FP50R07U1E4BPSA1 offers a wide range of high-power switching applications in a variety of fields. It is specially designed for motor control, motion control, industrial inverters, solar inverters, welding machines, air-conditioners, UPS systems, inverters and other high-power switching applications.
Since the FP50R07U1E4BPSA1 is designed for high-power applications, it is optimized for low on-state voltage drop and low switching losses for high efficiency performance in high-power applications. It is also capable of operating at high frequency with low EMI generation, making it suitable for high performance switching applications.
Working Principle
The FP50R07U1E4BPSA1 combines an IGBT transistor and a fast-recovery diode, which together form the basic power switching unit. The IGBT acts as a “switch” that is used to control the amount of current flowing through the power circuit. The fast-recovery diode is used to provide protection for the IGBT and to limit any inductive back-emf that may be generated in the power circuit.
When the IGBT is operated in the “off” state, the diode acts to provide a path for the current flow and limit the stored energy in the inductive load. When the IGBT is operated in the “on” state, the IGBT acts as a switch to provide a path for current flow to the load.
The FP50R07U1E4BPSA1 offers superior thermal and electrical characteristics and is designed for high-power applications. Its improved performance over other IPMs makes it suitable for a wide range of power control applications.
The specific data is subject to PDF, and the above content is for reference
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