Allicdata Part #: | 1219-1210-ND |
Manufacturer Part#: |
FT93C56A-UTR-B |
Price: | $ 0.13 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Fremont Micro Devices USA |
Short Description: | IC EEPROM 2K SPI 2MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 2Kb (256 x 8, 128 x 16) SPI 2MHz ... |
DataSheet: | FT93C56A-UTR-B Datasheet/PDF |
Quantity: | 5000 |
1 +: | $ 0.11340 |
10 +: | $ 0.11403 |
25 +: | $ 0.10584 |
50 +: | $ 0.10521 |
100 +: | $ 0.09343 |
250 +: | $ 0.09218 |
500 +: | $ 0.09081 |
1000 +: | $ 0.08838 |
5000 +: | $ 0.07943 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (256 x 8, 128 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 10ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FT93C56A-UTR-B is a serial non-volatile memory device that can work in a wide variety of applications. It is a low-cost, high-performance memory solution that can store data in the form of bits in an array of locations. This memory device is manufactured by Fairchild Semiconductor, and it can be used in industrial and commercial applications.
The FT93C56A-UTR-B offers a wide range of advantages, including flexibility, high performance, and low-voltage operation. It is designed to offer reliable data storage and fast read/write cycles that are suitable for high-throughput applications. This device has a read/write speed of up to 2 MHz, which is suitable for handling large amounts of data. The device is also available in multiple memory configurations, including 8K, 16K, 32K, and 64K. In addition, the device offers multiple memory protection features, including password-protected storage and error protection.
The working principle of this memory device is based on the concept of static random access memory (SRAM). SRAM is a memory technology that uses an array of memory cells, each of which stores a single bit of data. Each cell uses a single transistor and six capacitors, which form the basis of the memory technology. The FT93C56A-UTR-B uses a unique cell structure, which offers high performance and high density.
During operation, the memory cells are activated and the data is read in the same way as SRAM. Each cell is connected to a transistor, which is activated by a voltage pulse. When the cell is activated, a charge is stored on the capacitors and the bit is read from the cells. The read operations are fast, since only one cell needs to be activated at a time.
FT93C56A-UTR-B can be used in various fields, such as automotive, industrial, medical and aerospace applications. In automotive applications, the device can be used to store engine data, such as engine speed and temperature. In industrial applications, the device can be used to store product information, such as parts number, weight, and dimensions. In medical applications, the device can be used to store patient information and medical history. In aerospace applications, the device can be used to store flight data, such as altitude, speed, and position.
In summary, FT93C56A-UTR-B is a low-cost, high-performance memory solution that can be used in a variety of applications. Its SRAM-based design offers fast read/write operations and high reliability. Its wide range of features makes it a suitable solution for a range of industry and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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