FT93C66A-ITR-B

Series:	--
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	4Kb (512 x 8, 256 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	10ms
Memory Interface:	SPI
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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FT93C66A-ITR-B Application Field and Working Principle

Introduction

The FT93C66A-ITR-B is a nonvolatile memory device from FTDI Chip, a semiconductor company based in Plano, Texas, USA. The device is designed to provide nonvolatile storage for applications requiring a low cost, easy to use form of data retention. The FT93C66A-ITR-B utilizes a 9-bit field to store 32 bytes of data, arranged in 16 byte long words. The FT93C66A-ITR-B also features an increased endurance of 1000 write cycles, making it ideal for products with frequent data changes.

Application Field

The FT93C66A-ITR-B is used in a wide variety of applications where a low cost, reliable, non-volatile memory is needed. This includes industrial controllers and machinery, embedded systems, HVAC and automotive controllers, electronic point of sale scanners and displays, embedded medical devices, and more. These devices could be used in a wide range of applications from factory programming to remote sensor monitoring.The FT93C66A-ITR-B is also designed for high temperatures, making it perfect for rugged electronics application in extreme conditions such as high altitudes and temperatures. This device could also be used in aerospace applications with its ability to withstand higher temperatures for longer periods of time.

Working Principles

The FT93C66A-ITR-B nonvolatile memory device works by reading and writing bits to the device. The individual bits are then stored, and each bit is represented by a binary number which can be used to store data. The 9-bit field is used to write 32 bytes of data, which are arranged in 16 byte long words. The FT93C66A-ITR-B also features an increased endurance of up to 1000 write cycles, making it ideal for products with frequent data changes.The FT93C66A-ITR-B is also designed for low voltage operation down to 3.0V. By utilizing low voltage, power consumption is kept to a minimum. This can be beneficial for applications where battery-powered electronics are needed.

Conclusion

The FT93C66A-ITR-B is a nonvolatile memory device from FTDI Chip. It is designed to provide nonvolatile storage for applications requiring a low cost, easy to use form of data retention. It can be used in a wide range of applications from industrial controllers and machinery to aerospace applications. The device is designed for low voltage operation down to 3.0V and high temperatures making it perfect for rugged electronics applications in extreme conditions. The FT93C66A-ITR-B also features an increased endurance of up to 1000 write cycles, making it ideal for products with frequent data changes.

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