FZ600R12KE4HOSA1 Allicdata Electronics
Allicdata Part #:

FZ600R12KE4HOSA1-ND

Manufacturer Part#:

FZ600R12KE4HOSA1

Price: $ 84.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR 62MM-2
More Detail: IGBT Module Single 1200V 600A 3000W Chassis Mount...
DataSheet: FZ600R12KE4HOSA1 datasheetFZ600R12KE4HOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 77.16170
Stock 1000Can Ship Immediately
$ 84.88
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 600A
Power - Max: 3000W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 1.7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FZ600R12KE4HOSA1 is an Insulated Gate Bipolar Transistor (IGBT) module produced by Infineon Technologies. It is widely used in a variety of applications due to its reliability and its wide operating range. The FZ600R12KE4HOSA1 is designed for industrial, automotive and telecom applications.

The FZ600R12KE4HOSA1 IGBT module is designed to provide reliable high efficiency operation for a variety of applications. It has an operating voltage of 600V, a power rating of 2400W and a current rating of up to 185A. It is an ultrafast switching IGBT module with a reverse recovery time of just 5µs.

The FZ600R12KE4HOSA1 module has a wide range of application fields. It can be used in switch mode power supply systems, welding and soldering equipment, uninterruptible power supplies, motor drives, home appliances, and industrial automation systems. It also provides fast and reliable current control in servo motor systems used for motion control.

The FZ600R12KE4HOSA1 IGBT is based on the standard IGBT switching technology. This technology consists of two IGBTs connected in series, with each one controlled by its own gate terminals. An IGBT is a voltage-controlled semi-conductor device that combines the characteristics of both a MOSFET and a BJT transistor. When a positive gate signal is applied, the two IGBTs turn on and allow current to flow until the signal gate is turned off. This switching action is fast and efficient, making it ideal for use in a variety of power applications.

The FZ600R12KE4HOSA1 module has several features which make it suitable for a variety of applications. It has an integrated over voltage protection circuit which prevents damage to the IGBT in the event of overvoltage. It also has an integrated temperature control system which maintains the temperature of the IGBT within its operating range. The thermal behavior of the module is optimized for cooling, using an advanced low profile IGBT package.

The FZ600R12KE4HOSA1 IGBT module is designed to provide efficient and reliable operation. Its wide operating range and advanced design make it suitable for a variety of applications, and its high efficiency ensures that it can be used for many years without any problems.

The specific data is subject to PDF, and the above content is for reference

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