Allicdata Part #: | FZ600R17KE4HOSA1-ND |
Manufacturer Part#: |
FZ600R17KE4HOSA1 |
Price: | $ 108.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-2 |
More Detail: | IGBT Module Trench Field Stop Single 1700V 1200A 3... |
DataSheet: | FZ600R17KE4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 98.48930 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1200A |
Power - Max: | 3350W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 600A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 49nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FZ600R17KE4HOSA1 is a family of IGBT Modules designed for fast, efficient power delivery in a wide variety of applications. These IGBT modules are designed to have short switching times and low junction to case thermal resistance. The FZ600R17KE4HOSA1 is a three-phase IGBT module with a maximum rated collector-emitter voltage of 600v and a maximum collector current of 1700A.
Application Field for FZ600R17KE4HOSA1
The FZ600R17KE4HOSA1 has many applications in the power industry. These modules are suitable for a range of power conversion applications, such as induction motor drives, UPS systems, and industrial motor control. Additionally, IGBT Modules are often used in renewable energy systems, such as wind turbines and solar inverters. IGBT modules are also used in many transportation and automotive applications, including hybrid and electric vehicle powertrains.
Working Principle of FZ600R17KE4HOSA1
An IGBT, or Insulated Gate Bipolar Transistor, is a type of power electronic device that combines the best features of both bipolar transistors and MOSFETs. It combines the high input and linear dynamics of bipolar transistors with the low on-state resistance and fast switching capabilities of MOSFETs. This makes it a popular choice for applications where both high switching speed and low gate drive power are required. The FZ600R17KE4HOSA1 is a 3-phase IGBT module, which means that there are three independent circuits, each with its own IGBT, which can be driven independently.
The FZ600R17KE4HOSA1 uses IGBTs in a series-parallel configuration to provide higher current ratings and lower losses, while also increasing system efficiency. The IGBTs are insulated from the underlying gate driver by a gate oxide layer, which prevents high voltage discharge in case of gate failure. By combining multiple IGBTs in parallel, the FZ600R17KE4HOSA1 is able to handle higher current ratings while providing low losses. The reduced conduction losses make it an ideal choice for applications such as motor drives, UPS systems, and solar inverters.
The FZ600R17KE4HOSA1 also features a high-speed, low-loss freewheeling diode for efficient recirculation of reverse current during switching. This allows for faster switching and lower losses, making the FZ600R17KE4HOSA1 suitable for high-frequency applications. In addition, the IGBTs and freewheeling diode are designed with reverse-body-diode (RBD) protection, which limits the magnitude of the current in case of voltage spikes or other faults.
Overall, the FZ600R17KE4HOSA1 is an ideal choice for applications requiring both high-speed switching and low losses. With its high current ratings and durable construction, the FZ600R17KE4HOSA1 is a reliable choice for power management applications in the industrial, automotive, and renewable energy markets.
The specific data is subject to PDF, and the above content is for reference
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