FZ600R12KP4HOSA1 Allicdata Electronics
Allicdata Part #:

FZ600R12KP4HOSA1-ND

Manufacturer Part#:

FZ600R12KP4HOSA1

Price: $ 84.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR 62MM-2
More Detail: IGBT Module Trench Field Stop Single 1200V 600A C...
DataSheet: FZ600R12KP4HOSA1 datasheetFZ600R12KP4HOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 77.16170
Stock 1000Can Ship Immediately
$ 84.88
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 600A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 42nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FZ600R12KP4HOSA1, also known as an insulated-gate bipolar transistor module (IGBT), is a device used for switching and controlling high voltages and currents in an electrical system by using an insulated gate to control the current flow between two terminals. As with other types of transistors, IGBTs have multiple applications including power control, switching, saturation, and other related functions. This article focuses on FZ600R12KP4HOSA1 device’s application field and its working principle.

What is FZ600R12KP4HOSA1?

FZ600R12KP4HOSA1 is a type of IGBT that combines an insulated gate MOSFET and a bipolar junction transistor (BJT). These two transistors are combined in a single-chip package, allowing it to control current flow while maintaining a low voltage drop. Furthermore, its low on-state resistance (Rds on ) and very low gate threshold voltage (Vth) enable it to switch at extremely high speeds. This makes it ideal for switching applications where fast response is needed.

Application of FZ600R12KP4HOSA1

FZ600R12KP4HOSA1 IGBTs are often used in industrial, automotive, and consumer applications. For example, in industrial applications, these devices are used for variable speed drives, electronic ballasts, uninterruptible power supplies, motor control systems, and electric vehicles. In automotive systems, IGBTs are used for electric vehicle systems, LED lighting systems, engine control systems, and electric power steering. Finally, in consumer applications, IGBTs are used for low-voltage switch mode power supplies and white goods.

Working Principle of FZ600R12KP4HOSA1

IGBTs are current-controlled switches. They consist of two terminals, one that is known as the “base” and one known as the “collector.” When voltage is applied to the base terminal, the current flows through the device, allowing voltage to pass through. The current is determined by the device’s applied gate voltage, which regulates the current by controlling the resistance between the base and collector terminals. IGBTs operate in two modes: ON and OFF. When the gate voltage is low, the IGBT is in the OFF state and no current flows through the device. When the gate voltage increases, the IGBT transitions to the ON state, allowing current to flow through the device.

In order to switch on an IGBT, the gate voltage must reach a certain threshold voltage, known as Vth. This voltage is determined by the device’s characteristics. Once the gate voltage reaches Vth, the IGBT turns on and current flows through the device. In order to switch the device off, the gate voltage must be decreased to a certain level such that the IGBT switches off.

Conclusion

FZ600R12KP4HOSA1 IGBTs are versatile devices that can be used in a variety of applications, including industrial, automotive and consumer applications. These devices operate by switching on and off, based on the applied gate voltage, and are relatively fast to switch, due to their low on-state resistance and very low gate threshold voltage. Understanding the application field and working principle of these devices is important for the successful operation of any system utilizing IGBTs.

The specific data is subject to PDF, and the above content is for reference

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