Allicdata Part #: | FZ600R65KE3NOSA1-ND |
Manufacturer Part#: |
FZ600R65KE3NOSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHV190-6 |
More Detail: | IGBT Module Single 6500V 1200A 2400W Chassis Moun... |
DataSheet: | FZ600R65KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 6500V |
Current - Collector (Ic) (Max): | 1200A |
Power - Max: | 2400W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 160nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FZ600R65KE3NOSA1 module is a member of a range of IGBT (Insulated Gate Bipolar Transistor) modules designed for switching applications, such as those found in renewable energy systems like solar inverters, UPS units, and freewheeling rectifiers. The FZ600R65KE3NOSA1 module offers high levels of performance, providing fast switching speeds and low power loss.
An IGBT module is a combination of an insulated gate bipolar transistor and a field effect transistor, coupled to a larger base element. All three components are fabricated onto a single device and are interconnected within the module. This type of transistor is very efficient at transferring electrical power, without suffering from large losses, and is the ideal device for tasks that require the switching of large currents.
The FZ600R65KE3NOSA1 module uses a silicon carbide chip as the transistor component, which has low losses and a wide range of operating voltages. The base element consists of an aluminium nitride substrate, which has a high thermal conductivity and can therefore dissipate the heat produced by the module more efficiently. This combination of features makes the FZ600R65KE3NOSA1 module ideal for applications that need to switch large currents with low power losses.
The FZ600R65KE3NOSA1 module is specifically designed for use in systems where the switching frequency may be high, such as solar inverters, UPS units, and freewheeling rectifiers. It offers low power losses and fast switching speeds, making it suitable for a range of applications. In solar inverters, the module can be used to switch high currents of up to 200Amps, with very low losses and high levels of efficiency. In UPS units and freewheeling rectifiers, its fast switching speeds allow them to respond swiftly to changes in power supply. The low power losses also make it an ideal choice for systems that need to conserve energy.
The working principle of the FZ600R65KE3NOSA1 module is relatively simple. When the module is turned on, electric current passes through the transistor and is switched on when the gate voltage exceeds a certain threshold. When the gate voltage is reduced, electric current passes through the transistor and is switched off. This process occurs rapidly, allowing the system to switch currents quickly with minimal losses.
The FZ600R65KE3NOSA1 module is a reliable and efficient choice for a range of applications where large currents need to be switched quickly and with low power losses. It is an ideal device for tasks such as solar inverters, UPS units, and freewheeling rectifiers, providing fast switching speeds and low power losses.
The specific data is subject to PDF, and the above content is for reference
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