Allicdata Part #: | FZ800R12KS4B2NOSA1-ND |
Manufacturer Part#: |
FZ800R12KS4B2NOSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHM130-1 |
More Detail: | IGBT Module Single 1200V 1200A 7600W Chassis Moun... |
DataSheet: | FZ800R12KS4B2NOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 1200A |
Power - Max: | 7600W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 800A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 52nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
The FZ800R12KS4B2NOSA1, made by ABB, is a double-locked IGBT (Insulated Gate Bipolar Transistor) module. It has a breakdown voltage of 800V. This device is available in a TO-360 package allowing a higher power density.The FZ800R12KS4B2NOSA1 is designed for a wide power range and can be used in many different applications. In this article we will explore the application fields, advantages and working principle of this device.
FZ800R12KS4B2NOSA1 application field and working principle
Application Field
The FZ800R12KS4B2NOSA1 is used in many different applications including PowerFactor Correction (PFC) Inverter, Uninterruptible Power Supplies (UPS), Motor Drive, Automotive and AC-DC converter applications.High power application is also a field that the FZ800R12KS4B2NOSA1 is designed for as it allows up to 2kW of output power. This device is also suitable for harsh environments with temperatures up to +170°C.The FZ800R12KS4B2NOSA1 is also extremely efficient and has a low power dissipation, thus making it an attractive choice for many applications.
Advantages
The FZ800R12KS4B2NOSA1 has a number of advantages, such as high-power capability, low switching losses, and design flexibility.The FZ800R12KS4B2NOSA1 is also a double-locked device, providing additional protection against short circuit. Additionally, this IGBT module can be used in high-temperature applications up to +170°C.Other advantages include higher current densities and improved thermal effectiveness. This device is also easier to install and maintain, making it an attractive choice for applications requiring high power and reliability.
Working Principle
The FZ800R12KS4B2NOSA1 is an Insulated Gate Bipolar Transistor (IGBT). This type of device is a switching transistor with an insulated gate electrode. When a voltage is applied, the device turns on, conducting current and allowing for energy transfer. When the voltage is removed, the device turns off, stopping the current and energy transfer.The FZ800R12KS4B2NOSA1 is a double lock IGBT, meaning it has several safety features in place to protect against short circuit. This double locking ensures that the device will not short circuit even in harsh environments.The FZ800R12KS4B2NOSA1 is a versatile IGBT module, with many advantages and suitable for many applications. Its double locking feature ensures a safe, reliable operation, making it ideal for high power applications.
The specific data is subject to PDF, and the above content is for reference
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