Allicdata Part #: | FZ800R33KL2CB5NOSA1-ND |
Manufacturer Part#: |
FZ800R33KL2CB5NOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 3300V IHV 130MM |
More Detail: | IGBT Module 3300V 1500A 9800W Chassis Mount Modu... |
DataSheet: | FZ800R33KL2CB5NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1500A |
Power - Max: | 9800W |
Vce(on) (Max) @ Vge, Ic: | 3.65V @ 15V, 800A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 97nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FZ800R33KL2CB5NOSA1 is an insulated-gate bipolar transistor (IGBT) module which integrates a thyristor and a diode, and is developed by increasing the packaging lead count of discrete insulation-type power components for use in a variety of power electronic applications. IGBT modules are usually used in mid- to high-power applications, with ratings ranging between 50 to 6000 A and 100 to 6000 V.
The FZ800R33KL2CB5NOSA1 is an especially popular IGBT module due to its design and the various application fields it can cover. This module can be used in aerospace, automotive, industrial, medical, and other specialized power systems. Its development was a major breakthrough in the power electronics industry and has made IGBTs the go-to choice for applications that require reliability, fast switching speeds, and low power losses.
The FZ800R33KL2CB5NOSA1 IGBT module is a combination of an insulated gate bipolar transistor and an accompanying diode. The insulated gate works by controlling the movement of electrons through the device from side to side. This allows the device to function like a switch, with the electrons being able to flow through the IGBT when the gate is opened and blocked from the device when the gate is closed. By controlling the movement of electrons, the FZ800R33KL2CB5NOSA1 IGBT module is able to control the power flow in an efficient and reliable way.
In addition to its efficient and reliable operation, the FZ800R33KL2CB5NOSA1 IGBT module also has the capability to handle high levels of power without producing too much heat. This is due to the design of the module, which allows for a large amount of current to flow through it without dissipating large amounts of heat. The insulated gate of the module is designed in such a way that it remains cool despite the large amounts of current that pass through the device, resulting in a much more efficient module.
The FZ800R33KL2CB5NOSA1 IGBT module is a versatile and powerful device that can be used in a variety of different applications. Whether in a high voltage application, or a low voltage application, this IGBT module can provide efficient operation with low power losses. As the demand for IGBT modules continues to grow, users will be looking for reliable, efficient and powerful solutions for their applications. The FZ800R33KL2CB5NOSA1 IGBT module is an ideal solution for those applications, and offers users a reliable, powerful and efficient alternative.
The specific data is subject to PDF, and the above content is for reference
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