Allicdata Part #: | FZ800R33KL2CNOSA1-ND |
Manufacturer Part#: |
FZ800R33KL2CNOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 3300V IHV 130MM |
More Detail: | IGBT Module 3300V 1500A 9800W Chassis Mount Modu... |
DataSheet: | FZ800R33KL2CNOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1500A |
Power - Max: | 9800W |
Vce(on) (Max) @ Vge, Ic: | 3.65V @ 15V, 800A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 97nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FZ800R33KL2CNOSA1 is an IGBT module that offers powerful performance in various applications. It is designed for switching applications like welding, PC power supply and industrial drives, where it has exceptional thermal characteristics and can provide highly reliable operation. The FZ800R33KL2CNOSA1 can be used as a part of a larger system or as a standalone component.
The FZ800R33KL2CNOSA1 is a three-phase IGBT module with a high reverse voltage rating and a high current capability. It has an output stage composed of three groups of insulated gate bipolar transistors (IGBTs), each comprising three IGBTs connected in an inverted parallel configuration. The IGBTs are driven by an independent gate drive circuit integrated into the module. This allows for faster switching times and improved switching efficiency. Additionally, the integrated gate drive circuit also provides protection of the IGBTs against high voltage surges.
The FZ800R33KL2CNOSA1 module uses a planar construction technology that uses a high quality and strong material such as silicon. This material offers excellent thermal properties that allow it to dissipate heat faster, thus providing a high level of reliability even during long hours of operation. Additionally, this IGBT module provides a controllable dead-time to prevent cross conduction and accidental short-circuits.
The main purpose of the FZ800R33KL2CNOSA1 is to offer an efficient way for switching power between different circuits, thus providing a range of applications in industrial and consumer electronics. It is most commonly used in applications such as PC power supplies, switching converters, variable speed drives, UPS units, welders, solenoids and valves. The FZ800R33KL2CNOSA1 can provide high current and voltage ratings, while its integrated gate drive circuit helps to reduce energy losses and improve switching efficiency.
In conclusion, the FZ800R33KL2CNOSA1 module is a powerful, reliable and efficient electronic component for switching power in various applications. Its thermal properties and integrated gate drive circuit provide improved switching efficiency and reduced energy losses, making it an ideal choice for customers who require an effective and reliable switching solution.
The specific data is subject to PDF, and the above content is for reference
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