FZ800R33KF2CNOSA1 Allicdata Electronics
Allicdata Part #:

FZ800R33KF2CNOSA1-ND

Manufacturer Part#:

FZ800R33KF2CNOSA1

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT A-IHV130-3
More Detail: IGBT Module Half Bridge 3300V 1300A 9600W Chassis...
DataSheet: FZ800R33KF2CNOSA1 datasheetFZ800R33KF2CNOSA1 Datasheet/PDF
Quantity: 1000
2 +: $ 0.63000
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 3300V
Current - Collector (Ic) (Max): 1300A
Power - Max: 9600W
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 100nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FZ800R33KF2CNOSA1 devices are Insulated-Gate Bipolar Transistors (IGBTs) modules which offer a wide range of features, making them suitable for many different applications. The device combines two IGBTs (Insulated Gate-Bipolar Transistors) and a diode bridge in a single robust package. The device has excellent switching characteristics and high current carrying capability, making it the ideal choice for a variety of motor control, power conversion, and current limit control applications.

An IGBT is a semiconductor device which combines a bipolar junction transistor (BJT) and a Field Effect Transistor (FET), thus providing superior performance compared to a discrete transistor/FET combination. The IGBT has two terminals, the Gate and the Collector. When a voltage is applied between the Gate and the Collector, a current is passed between the Collector and Emitter, thus controlling the switching of power to an external load. The FZ800R33KF2CNOSA1 offers superior current handling and switching capabilities compared to discrete transistors, making it the ideal choice for applications with large currents and/or high switching frequencies.

The FZ800R33KF2CNOSA1 features a low junction-emitter saturation voltage (VCE(SAT)) of less than 1.8V, high collector-emitter breakdown voltage (VCES) of 800V, and a collector-emitter short-circuit current of 33A. The device also features a low gate threshold voltage of 2V and a low gate to emitter capacitance of 2.3nF, making it suitable for high speed switching applications. These features combined make the FZ800R33KF2CNOSA1 an ideal choice for applications such as motor control, power conversion and current limit control.

The FZ800R33KF2CNOSA1 is widely used in motor control applications due to its superior current handling capabilities, low gate threshold voltage, and high switching frequency. The device can be used to drive high power AC and DC motors in a wide range of applications such as HVAC (Heating, Ventilation and Air Conditioning) systems, electric forklifts, agricultural machinery, and power electronics. The device is also widely used in power conversion and current limit control applications due to its superior switching characteristics and robust package.

In conclusion, the FZ800R33KF2CNOSA1 is a robust IGBT module which can be used in a wide range of applications due to its excellent current handling and switching characteristics. The device is an ideal choice for applications such as motor control, power conversion and current limit control, due to its low junction-emitter saturation voltage (VCE(SAT)), high collector-emitter breakdown voltage (VCES), low gate threshold voltage, and high switching frequency.

The specific data is subject to PDF, and the above content is for reference

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