GD25D05CEIGR Allicdata Electronics

GD25D05CEIGR Integrated Circuits (ICs)

Allicdata Part #:

1970-1001-2-ND

Manufacturer Part#:

GD25D05CEIGR

Price: $ 0.20
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 512Kb (64K x 8) SPI - Dual I...
DataSheet: GD25D05CEIGR datasheetGD25D05CEIGR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.18362
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 50µs, 4ms
Memory Interface: SPI - Dual I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)
Description

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GD25D05CEIGR Application Field and Working Principle

GD25D05CEIGR is a type of non-volatile memory that can store information even if the power is pulled. It is constructed of a silicon chip, thin layers of metal and insulated, vacuum-sealed glass. The silicon wafer has a layer of metal which is covered by a layer of insulating material. This insulating layer is then layered with a thin layer of metal, which is then sealed with a vacuum sealant.

GD25D05CEIGR memory chips are used in a variety of applications, from hand-held digital devices to custom computers and embedded systems. Its small size and high capacity make it ideal for situations where the memory chip needs to be small and powerful enough to hold large amounts of data. It is also used in a variety of communication networks, from cellular networks to terrestrial radio networks.

The working principle of GD25D05CEIGR memory is based on the charge transfer process. This is when electrons are able to move through thin layers of metal, which act as conductors, and into the insulating layer. The charge generated by the electron movement is transferred to the silicon wafer, which stores it. When the power is applied, the electrons are able to travel through thin layers of metal and back into the silicon wafer.

The GD25D05CEIGR memory chip is designed to be low power. This means that it requires very little energy to store information and is able to keep the memory intact even when the power is pulled. It is also highly resistant to damage from electro-magnetic radiation and radiation from the environment, making it durable and reliable. As the silicon wafers on which the memory is stored can be small, it is ideal for applications which require small, but reliable memory components.

The ability of the GD25D05CEIGR memory chip to store information over time allows it to be used in applications which involve data logging, data analysis, and machine learning. It is also used in embedded systems, where it is able to store critical data which can be retrieved later when needed.

The GD25D05CEIGR memory chip has a wide variety of applications, from hand-held digital devices to custom computers and embedded systems. Its small size and low power consumption make it ideal for a variety of applications where size and power efficiency are important factors. The ability to store information over time, as well as its resistance to damage from electro-magnetic radiation and other environmental factors make it reliable and durable.

The specific data is subject to PDF, and the above content is for reference

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