GD25LQ20CUIGR

As the core storage elements of modern integrated circuits, flash memories play an essential role in many analog and digital electronics. Among them, GD25LQ20 is one of the most common products in the flash memory market. It is suitable for applications that require high-density and wide-temperature operation. Its features, application field and working principle are introduced in this article.

Features

GD25LQ20 is a 256Mb low-voltage serial Flash memory produced by GigaDevice Semiconductor. It has a wide voltage range from 1.65V to 3.6V, and provides embedded protection functions such as OTP lock, write protection and sector erase protection. Also, GD25LQ20 features Turbo Write, QuadSPI and SFDP modes that provide high speed transmission and high integration, which are suitable for high-speed embedded systems and applications that require tight memory space.

Application Fields

Due to its high density and multifunctional features, GD25LQ20 is suitable for a wide range of fields. It can be used in smart door lock control, wearable devices, home appliance control, medical equipment, industrial control, and so on. Moreover, its wide range of operating temperature and high reliability also make it one of the best options available on the market.

Working Principle

The GD25LQ20 works by storing data in an array of memory cells. Each memory cell is made up of two components: a memory transistor and a floating gate. The memory transistor acts as a gate for electrons entering and leaving the floating gate. When a voltage is applied to the memory transistor, it allows electrons to move from the source to the drain. By manipulating the voltage applied to the memory transistor, it is possible to transfer data from the floating gate to the drain. This process is known as writing data to the memory cell. Conversely, when the voltage is reversed, the current flows from the drain to the source and electrons are transferred from the floating gate, which is referred to as a read operation.

In addition, GD25LQ20 can use multiple techniques to improve performance, including Turbo Write, QuadSPI, and SFDP. Turbo Write utilizes a split write process to speed up write operations by writing blocks of data in parallel and then combining the written data into a single block in an additional operation. QuadSPI and SFDP, on the other hand, speed up read operations by transferring multiple bits of data in every single clock cycle, thus increasing the data transfer rate.

Conclusion

GD25LQ20 is a 256Mb low-voltage serial Flash memory featuring many advantageous features, including wide voltage range operation, embedded protection functions, Turbo Write, QuadSPI and SFDP modes. It is suitable for a broad range of fields and applications, such as smart door lock control, wearable devices, home appliance control, medical equipment, and industrial control. Besides, its working principle is also relatively simple, which exploits the concept of voltage manipulation to write and read data to memory cells.