GD25LQ20COIGR Allicdata Electronics
Allicdata Part #:

GD25LQ20COIGR-ND

Manufacturer Part#:

GD25LQ20COIGR

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8) SPI - Quad I/...
DataSheet: GD25LQ20COIGR datasheetGD25LQ20COIGR Datasheet/PDF
Quantity: 1000
12000 +: $ 0.19236
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 2.1 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Description

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GD25LQ20COIGR Memory Application Field and Working Principle

GD25LQ20COIGR memory is a type of non-volatile memory that is widely used in applications such as consumer electronics and automotive applications. This type of memory is capable of storing data even when the power is turned off and is remarkably smaller than other types of memory such as DRAM. GD25LQ20COIGR memory also offers an array of functions not available with other types of memory.

Application Fields

GD25LQ20COIGR memory can be used in a variety of applications including automotive systems, consumer electronics and industrial applications. In automotive systems, it can be used in onboard computers or as a replacement for bulky traditional memory. In consumer electronics, it is popular in digital cameras, MP3 players and cellular phones. A key benefit of using GD25LQ20COIGR memory in consumer electronics applications is its size, which is significantly smaller than traditional memory. As for industrial applications, GD25LQ20COIGR memory is used in the medical, aerospace and defense industries for applications such as data logging and secure storage.

Working Principle

The working principle of GD25LQ20COIGR memory is similar to that of other types of non-volatile memory. At its core, a GD25LQ20COIGR memory device is composed of two components: a floating-gate transistor and an erase gate. A single memory cell is made up of several such components, arranged in a two-dimensional rectangular array. When data is written to a cell, electrons are injected into the floating-gate transistor to create a positive charge on the gate, thus storing the data. When data is read, the presence or absence of a positive charge is used to determine the value of the bit.

To erase data, a negative voltage is applied to the erase gate, which causes the electrons to be released from the floating gate. This process is known as source erasure, and it returns the cell to its original, uncharged state. This process is similar to the workflow employed by other types of non-volatile memory, such as EEPROM and ROM.

Conclusion

GD25LQ20COIGR memory is a type of non-volatile memory that is well-suited to a variety of applications, from consumer electronics and automotive systems to industrial and aerospace applications. It offers several benefits, such as low power consumption and small size, not available with other types of memory. The working principle of GD25LQ20COIGR memory is similar to that of other types of non-volatile memory and is based on the concept of injecting and releasing electrons from floating gate transistors.

The specific data is subject to PDF, and the above content is for reference

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