GDZ4V1LP3-7 Discrete Semiconductor Products

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GDZ4V1LP3-7 is a single zener diode which incorporates various technological advances that increase efficiency and improve performance. It provides the user with a reliable set of parameters in a wide range of application areas and can be customized to meet the needs of specific applications.

The device is part of the GDZ4V series of single zener diodes, which offer a wide range of voltage and power ratings. It has a reverse voltage of 4V, rated power of 1W and a zener breakdown voltage of 3.7V. This makes it ideal for applications such as voltage regulation, voltage clamping and transient voltage suppression. The device has a low forward voltage drop of 0.1V and a low temperature coefficient of 0.02%, allowing it to be used in high temperature and low voltage applications.

In terms of its working principle, the device operates by using a reverse voltage-dependent current from a reverse biased PN junction to produce a controlled negative resistance. This negative resistance helps control the reverse breakdown voltage and the zener current of the device. The current flow is reversed in the PN junction and increases the zener voltage. The resulting current provides a stable output.

The GDZ4V1LP3-7 single zener diode offers several advantages as compared to other diodes. It has a low reverse leakage current, allowing it to be used in low power applications. It also has good forward voltage drop characteristics, allowing it to be used in high temperature applications. Additionally, the device has excellent stability and reliability over a wide range of temperatures.

To sum up, the GDZ4V1LP3-7 single zener diode is an efficient and reliable device that provides superior performance for a variety of applications. It has a low forward voltage drop, a wide range of voltage and power ratings and excellent stability and reliability over a wide range of temperatures. It is ideal for applications such as voltage regulation, voltage clamping and transient voltage suppression.

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