GDZ4V3B-G3-08 Allicdata Electronics
Allicdata Part #:

GDZ4V3B-G3-08-ND

Manufacturer Part#:

GDZ4V3B-G3-08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.3V 200MW SOD323
More Detail: Zener Diode 4.3V 200mW ±2% Surface Mount SOD-323
DataSheet: GDZ4V3B-G3-08 datasheetGDZ4V3B-G3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02778
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±2%
Power - Max: 200mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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GDZ4V3B-G3-08 is a kind of single Zener diodes which have wide applications. It is widely used in power supplies, voltage regulation, solenoid and relay drivers, motor control, and other applications requiring reversed power protection.

A single Zenner diode exhibits a negative DC resistance when the reverse bias voltage is larger than the Zener voltage. It is essentially a PN junction diode which is operated in the breakdown region. The characteristics of the diode are such that the voltage drop across the diode remains almost constant over a certain range of current. As the current increases, the voltage drop across the diode increases slightly but remains relatively constant.

The mode of operation of the GDZ4V3B-G3-08 single Zener diode is known as Zener breakdown or Zener effect. It occurs when a large electric field is applied across the junction. The electric field consists of an electric field along the junction region, which causes a boundary layer of electrons and holes in the junction region to drift and recombine. This recombination leads to generation of new electron-hole pairs, thus increasing the current flow across the junction.

The working principle of GDZ4V3B-G3-08 single Zener diode is such that when a reverse bias voltage higher than the Zener voltage is applied to the diode, a large electric field is created across the junction. This large electric field breaks down the junction creating a conducting path between anode and cathode, forming a low-resistance path. All the current then flows through this path and the diode behaves like a conductor.

The GDZ4V3B-G3-08 single Zener diode can be used in various voltage regulation and protection applications. It is commonly used as a regulator for suppressing the input voltage to a constant level and for providing a reverse voltage blocking capability. This device can be used as a voltage clamping diode for limiting the voltage in circuits with low reverse-standoff voltages. It is also used in AC applications for providing peak voltage clamping and in applications requiring switching between reverse, blocking and forward bias voltages.

The GDZ4V3B-G3-08 single Zener diode is also widely used for protecting circuits and components from overvoltage or surge conditions. It provides a low-cost solution for protecting circuits against transients and voltage surges. The device can be used in various applications such as Telecom, Computers, and Power Supplies. In addition, it also has applications in motor control, solenoid and relay driver, and Lighting systems.

In conclusion, the GDZ4V3B-G3-08 single Zener diode is a robust and reliable device used in a variety of applications requiring low forward and reverse current, high breaking capacity and low switching capability. The device is ideal for use in Telecommunication systems, Computers, Motor Controls, and Lighting Systems. Its working principle involves Zener breakdown occurring when a large electric field is applied across the junction, resulting in a conducting path allowing current to flow through the junction.

The specific data is subject to PDF, and the above content is for reference

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