
Allicdata Part #: | GDZ4V3B-E3-08-ND |
Manufacturer Part#: |
GDZ4V3B-E3-08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 4.3V 200MW SOD323 |
More Detail: | Zener Diode 4.3V 200mW ±2% Surface Mount SOD-323 |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.02249 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 100 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
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The GDZ4V3B-E3-08 (hereafter referred to as the ‘Zener diode’) is a single, 99% efficient Zener diode created and produced by STMicroelectronics. The Zener diode range are used in a variety of applications for voltage regulation, current limiting and temperature compensation and offer excellent electrical performance in such scenarios. This particular device is 4.7V rated, with an imput current of 350mA (Izmax) and a maximum Vz of 4.7V.
The Zener diode is a heavily doped p-n reverse biased junction diode, which has been specially designed to breakdown at a specific reverse voltage rather than possibly destructively ‘over-breakdown’. When the diode is subjected to more reverse voltage than the breakdown voltage (Vz) the current starts to increase massively, and is limited only by the external circuit resistance. Since the device creates a voltage-current characteristic similar to a resistor having an extremely large negative gradient, it is used to regulate, limit and provide temperature compensation.
Zener diodes are commonly used in several applications such as voltage references, battery management, etc. In voltage references applications, they can be used as voltage clamping devices as applied in radio frequency amplifiers and DC-DC converters. Also, the high power rating, fitted for the GDZ4V3B-E3-08, makes it the perfect component for regulating power supply and providing varying voltages in power converters, power supplies and any other circuit where precision regulation is a must.
When Zener diodes are connected in reverse bias, in other words, the anode side of the diode is connected to a negative voltage, the current flow is in the reverse direction and no conduction is generally found other than leakage until the device reaches its breakdown voltage (Vz). When the voltage reaches that certain threshold, the reverse leakage current increases exponentially and creates a constant reverse voltage. This means that the anode and cathode voltages remain constant in the circuit, allowing current to leave the cathode and enter the anode thus protecting other components from reverse voltage.
The advantage of using Zener diodes is that they can be used in low voltage applications where other protective components like fuses would not be suitable. In addition, they usually have a very low resistance based upon the silicon semiconductor used and are therefore capable of high current. Zener diodes are also not affected by the varying temperature of the environment, making them an ideal component for electronics projects, from automated thermometers to the most complex counting circuits.
In summary, the GDZ4V3B-D3-08 is a single, 99% efficient Zener diode used in voltage regulation, current limiting and temperature compensation applications. This device offers excellent electrical performance for precision regulation, power supplies and DC-DC converters. The Zener diode is also capable of protection from reverse voltage, which can save precious components from being destroyed. The wide range of applications that require this component and its low resistance makes it an economical yet reliable choice when designing and building any electronics system.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
GDZ4V7B-HE3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V3LP3-7 | Diodes Incor... | 0.03 $ | 1000 | DIODE ZENER DFN0603-2Zene... |
GDZ4V3B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V1LP3-7 | Diodes Incor... | -- | 1000 | DIODE ZENER DFN0603-2Zene... |
GDZ4V3B-HG3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V3B-G3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V3B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V7B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V3B-HG3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V7B-HG3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V3B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V7B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V3B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
GDZ4V7B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V7B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V7B-G3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V7B-HG3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 4.7V 200MW SO... |
GDZ4V7LP3-7 | Diodes Incor... | -- | 10000 | DIODE ZENER 4.7V 250MW 2D... |
GDZ4V3B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 4.3V 200MW SO... |
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