GIB1401-E3/81 Allicdata Electronics
Allicdata Part #:

GIB1401-E3/81-ND

Manufacturer Part#:

GIB1401-E3/81

Price: $ 0.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 8A TO263AB
More Detail: Diode Standard 50V 8A Surface Mount TO-263AB
DataSheet: GIB1401-E3/81 datasheetGIB1401-E3/81 Datasheet/PDF
Quantity: 1000
800 +: $ 0.46780
Stock 1000Can Ship Immediately
$ 0.52
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Description

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Diodes are commonly used electronic components which are found in a range of electrical circuits and devices. There are a number of different types of diodes, each of which serves a specific purpose. One particular type of diode which is widely used today is known as a GIB1401-E3/81 diode. This article will discuss the application field and working principles of this specific diode.

First, let’s begin by discussing the application field of the GIB1401-E3/81 diode. This type of diode is primarily used in power supplies and voltage regulators. It is capable of handling large signals and efficiently converting them into smaller signals. It is also used in AC-DC conversion circuits which are often found in HVAC systems and other home appliances. In addition to these uses, the diode can be utilized in various types of rectifier circuits, as well as in charging and discharging circuits.

Now, let’s move on to the working principle of this diode. The GIB1401-E3/81 diode is a silicon NPN diode which is constructed from two pieces of crystalline silicon. One side is doped with N-type impurities, while the other is doped with P-type impurities. When a voltage is applied to the diode, electrons are drawn from the N-type side and holes are drawn from the P-type side. This creates a current flow through the diode, which in turn produces a voltage drop across the diode.

When the diode is connected in a forward direction, the current will flow freely through it in one direction. This is because the electric field created by the voltage applied to the diode allows electrons to move through it more easily in one direction, while significantly resisting them in the opposite direction. This is known as the forward bias direction. On the other hand, when the diode is connected in a reverse direction, the electric field created by the voltage applied to the diode will create a barrier which resists the flow of electrons and holes. This is known as the reverse bias direction.

These characteristics make the GIB1401-E3/81 diode an ideal choice for many applications. By taking advantage of its unique properties, it can be used in a variety of circuits, from simple AC-DC conversion circuits to high-powered voltage regulators. This makes it an incredibly versatile component, and one that is widely used in the electronics industry.

The specific data is subject to PDF, and the above content is for reference

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