GL12-HT3-GS08

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Transient Voltage Suppression (TVS) Diodes have become a standard component in power electronic designs due to their effective protection against overvoltages. The GL12-HT3-GS08 TVS Diode offers a quick response time and very low capacitance, making it suitable for high-density circuits in a smaller size. This article provides an overview of its application fields and working principle.

The GL12-HT3-GS08 TVS Diode can be used in a variety of applications, including industrial, automotive, and consumer applications, which require protection from overvoltages. The diode offers high surge capability for up to 20A of instantaneous overcurrent for 8/20 µs environments, and also has a low stand-off voltage of 5V. The diode also has a low capacitance of 0.7pF, which makes it ideal for high frequency circuit protection. Additionally, the diode has a fast response time and is designed in a small SOT23 package, making it suitable for use in high-density applications.

The working principle of the GL12-HT3-GS08 TVS Diode is based on the use of a Zener diode structure. The diode operates as a Zener diode, with a semiconductor junction that is reverse biased by the applied overvoltage. The reverse-biased junction creates what is known as a Zener breakdown voltage, which causes the current to flow through the diode, thereby protecting the circuit. Additionally, the Zener breakdown voltage reduces the voltage across the diode, allowing it to absorb the overvoltage and protect the circuit.

The GL12-HT3-GS08 TVS Diode is designed to provide reliable protection from transient overvoltage spikes, making it ideal for a variety of applications, including automotive, industrial, and consumer applications. The diode is designed with a fast response time and low capacitance, making it suitable for high frequency circuit protection, and the small SOT23 package makes it suitable for use in high-density circuit designs.

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