| Allicdata Part #: | GL12T-E3-08GITR-ND |
| Manufacturer Part#: |
GL12T-E3-08 |
| Price: | $ 0.06 |
| Product Category: | Circuit Protection |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | TVS DIODE 12V 24V SOT23-3 |
| More Detail: | N/A |
| DataSheet: |  GL12T-E3-08 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 3000 +: | $ 0.05358 |
| 6000 +: | $ 0.05061 |
| 15000 +: | $ 0.04614 |
| 30000 +: | $ 0.04316 |
| 75000 +: | $ 0.03969 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 24V |
| Supplier Device Package: | SOT-23-3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 2.5pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 300W |
| Current - Peak Pulse (10/1000µs): | 5A (8/20µs) |
| Series: | -- |
| Voltage - Breakdown (Min): | 13.3V |
| Voltage - Reverse Standoff (Typ): | 12V (Max) |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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TVS - DiodesTransient Voltage Suppressor Diodes (TVS-Diodes) are a type of semiconductor devices used for the protection of electronic components from electrical overstress. These devices are capable of providing fast and efficient protection from electrostatic discharge (ESD), lightning, and other fast transient voltage events.The GL12T-E3-08 is one of the most popular and widely used TVS diodes available in the market. This device is a three-terminal, unidirectional Electronics Transient Voltage Suppressor (ETVS). It can be used to protect against a wide range of electrical overstresses such as high voltage overshoots, lightning, and power supply transients.The GL12T-E3-08 has a maximum peak pulse power rating of 8A, a breakdown voltage of 12V, and a working voltage of 6V. The device has a fast response time of less than 500 ms, making it ideal for fast transient applications. The device also has a low capacitance of 0.3pF, which helps reduce ringing.The GL12T-E3-08 is widely used in cars, telecommunications systems, data center equipment, consumer electronics, and other applications. In automotive applications, the GL12T-E3-08 can be used to protect headlights, engine control systems, and safety systems from overstresses caused by lightning and short-circuits. In telecommunications systems, the device can be used to protect against high voltage spikes caused by lightning. In data center equipment, the device can be used to protect against overvoltages caused by power supply transients. In consumer electronics, the device can be used to protect against ESD, transient voltage surges, and other fast transient events.The working principle of GL12T-E3-08 consists of a reverse-mounted pn junction diode formed by a low-temperature epitaxial layer lying on top of the gallium arsenide substrate. When an electrical overstress is applied, the diode forms a breakdown voltage and is able to limit the overstress. The breakdown voltage of the device can be adjusted to the desired level by changing the doping of the pn junction. The device is designed in such a way that it is able to limit the overstress to a non-destructive level.The GL12T-E3-08 is a reliable and efficient device that is widely used in a variety of applications for the protection of electronic components from electrical overstress. It has a fast response time and a low capacitance which makes it suitable for fast transient applications. The device has a wide range of applications in cars, telecommunications systems, data center equipment, consumer electronics, and other applications.The specific data is subject to PDF, and the above content is for reference
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