GP25MHE3/54 Allicdata Electronics
Allicdata Part #:

GP25MHE3/54-ND

Manufacturer Part#:

GP25MHE3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 2.5A DO201
More Detail: Diode Standard 1000V 2.5A Through Hole DO-201AD
DataSheet: GP25MHE3/54 datasheetGP25MHE3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Description

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.

The GP25MHE3/54 is a type of Diode - Rectifier - Single. This device is a Short Recovery, One Phase, Half Switch Mode Rectifier, developed and made by Global Power Technologies Group. It is a high efficiency rectifier that is an ideal solution for various power converter applications. It is available in a wide range of pin-out configurations, with a maximum isolation voltage of 1,500 volts. The maximum repetitive surge current rating of this diode is 25A.

The GP25MHE3/54 is primarily used in power converters and rectification circuits, for controlling and switching voltage and current. This diode can also be used for rectification of low-power signals and optical signals. Its main application fields include ac-dc converters, dc-ac converters, and current limiters. This diode also finds use in dc-dc step-up and step-down converters, as well as in electronic ballasts. Some of its other popular applications include power switches, LED drivers, and motor-drive applications.

The main principle of operation of the GP25MHE3/54 is that of a reversed polarity conductive semiconductor diode. It is made up of a p-type base, an n-type epitaxial layer, a source or a collector depending on the type of diode, and a drain or an emitter depending on the type of diode. The n-type region is used to hold majority carriers, while the p-type region is used to hold minority carriers. The normal operation of this diode occurs when the reverse blocking voltage is applied. When the anode has a higher potential than the cathode, a high electric field builds up across the pn junction, which allows current to pass from the anode to the cathode. This current flow is used to reduce the voltage and charge the loads.

The main advantages of the GP25MHE3/54 are its low leakage current, its high efficiency and reliability, its fast switching times, and its robust design. It has a low forward voltage drop and a high thermal stability. This diode is RoHS compliant and its operating temperature range is from -55°C to 150°C. This device is highly reliable for industrial applications and offers an extensive circuit design freedom.

Overall, the GP25MHE3/54 is an ideal solution for various power conversion and rectification applications. This diode is low cost, efficient and reliable, and is suitable for use in circuits that require fast switching and robust design. Its wide range of pin-out configurations and its maximum isolation voltage makes it suitable for a variety of applications. With its low leakage current, its high efficiency and reliability, and its RoHS Compliance, this is an ideal device for industrial applications.

The specific data is subject to PDF, and the above content is for reference

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