Series:	SUPERECTIFIER®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 3A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	5µs
Current - Reverse Leakage @ Vr:	5µA @ 100V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-201AD, Axial
Supplier Device Package:	DO-201AD
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	GP30B

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Introduction

GP30BHE3/54 is widely used in many applications, particularly in rectifier and Switching Power Supplies. It is a single diode, designed for high-efficiency general-purpose linear power supplies. It is resistant to transients, temperature variations, and high-voltage spikes. By utilizing a metal-oxide-semiconductor field-effect transistor (MOSFET) structure, GP30BHE3/54 provides high-current switching and low-power consumption.

GP30BHE3/54 Application Fields

GP30BHE3/54 is used in a wide range of applications, ranging from automotive electronic components, communications and computer systems, to industrial equipment. It can be used as a rectifier diode, transistor, or as an integrated circuit in power electronic applications. As a rectifier, GP30BHE3/54 is commonly used to convert alternating current (AC) to direct current (DC). In this configuration, the diode is used as a semiconductor device to convert the AC voltage to DC voltage.In switching power supplies, GP30BHE3/54 is used as a variable rectifier. This makes it ideal for power supplies with variable voltages, such as those used in mobile phones and personal computers. As an integrated circuit, GP30BHE3/54 can be used to drive power loads of up to 200 W.

GP30BHE3/54 Working Principle

GP30BHE3/54 is a MOSFET lift-off technology. This type of device combines the principles of both rectifiers and MOSFET transistors. In operation, the diode absorbs the input voltage from AC power and passes it through a rectifying section of the chip. Afterward, a MOSFET controlled voltage is added to the diode’s output current. This process adds up to the DC output voltage, creating a higher energy efficiency.As a MOSFET diode, GP30BHE3/54 is designed for high-current switching and low-power consumption. When it is used as a rectifier, its low-voltage drop and high-current carrying capability make it ideal for powering power supplies with variable voltages. In addition, the device features high-temperature and high-voltage performance, which makes it suitable for a range of applications.

Conclusion

GP30BHE3/54 is a high-efficiency rectifier diode, typically used in applications such as automotive electronic components, communications and computer systems, and industrial equipment. It features a MOSFET lift-off technology, allowing it to produce a higher energy efficiency. The device also features high-temperature and high-voltage performance, allowing it to be used in a range of power supply applications. GP30BHE3/54 is also resistant to transients, temperature variations, and high-voltage spikes.

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