GSID100A120S5C1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	170A
Power - Max:	650W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 100A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	13.7nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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GSID100A120S5C1: Application Field and Working Principle

Introduction

GSID100A120S5C1 is a two-in-one integrated device combining insulated gate bipolar transistor (IGBT) and reverse conductive diode modules in one package. It is specifically designed for operation in medium- and high-power applications up to 100 amperes and 1200 volts. This article aims to provide an overview of GSID100A120S5C1 application field and working principle.

Application Field

GSID100A120S5C1 is well-suited for motion control, induction motor drives, line frequency power converters, and welding applications due to its high efficiency and low thermal resistance. It is well-suited for high switching frequency applications, such as in solar inverters, Grid Tie Inverters, Uninterruptible Power Supplies (UPS), DC-DC converters, and traction drive inverter applications.GSID100A120S5C1 can also be used in high-power AC systems such as induction cooking, welding, or medical X-ray generators. One example of an application where GSID100A120S5C1 can be used is in the development of an overall system for monitoring, controlling, and calculating the temperature of a commercial oven.

Working Principle

GSID100A120S5C1 is composed of two devices, an insulated gate bipolar transistor (IGBT) and a reverse conduction diode. The IGBT is a type of power transistor that is designed to control larger voltage and current than a standard field effect transistor (FET). It operates by controlling the amount of resistance in the collector-emitter channel between the drain and the source, similar to an FET.The reverse conduction diode allows the IGBT to switch off and then being controlled by the gate voltage (Vg). When the gate voltage (Vg) exceeds the threshold, the IGBT conducts, allowing current to flow in the collector-emitter path. The size of this current path is determined by the current gain of the IGBT, which is directly proportional to the Vcc supply voltage.The combination of IGBT and reverse conduction diode creates a two-in-one module, allowing for a unique control characteristic. The IGBT is capable of switching on and off quickly, while the reverse conduction diode allows the module to conduct even when the gate voltage is removed, making it ideal for high-voltage power switching applications.

Conclusion

In conclusion, GSID100A120S5C1 is a two-in-one integrated device combining insulated gate bipolar transistor (IGBT) and reverse conductive diode modules in one package, specifically designed for operation in medium- and high-power applications up to 100 amperes and 1200 volts. It is well-suited for high-voltage power switching applications such as solar inverters, Grid Tie Inverters, Uninterruptible Power Supplies (UPS), DC-DC converters, traction drive inverter applications, induction cooking, welding, or medical X-ray generators. GSID100A120S5C1 operates by controlling the amount of resistance in the collector-emitter channel between the drain and the source, and allowing current to flow in the collector-emitter path through the combination of an IGBT and reverse conduction diode.

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