Allicdata Part #: | GSID600A120S4B1-ND |
Manufacturer Part#: |
GSID600A120S4B1 |
Price: | $ 127.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | SILICON IGBT MODULES |
More Detail: | IGBT Module Half Bridge 1200V 1130A 3060W Chassis... |
DataSheet: | GSID600A120S4B1 Datasheet/PDF |
Quantity: | 1000 |
4 +: | $ 115.89200 |
Series: | Amp+™ |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 1130A |
Power - Max: | 3060W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 600A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 51nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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< html >Transistors - IGBTs - Modules
A GSID600A120S4B1 module is a three-phase insulated gate bipolar transistor (IGBT) module designed to operate in high frequency, high voltage and high current applications. It is designed to provide higher performance and stability compared to other IGBT modules. With a nominal voltage of 1,200V and a current rating of 600A, the GSID600A120S4B1 can handle a huge range of power applications. In addition, its paralleled, non-intrusive, simple and robust design makes it an ideal choice for a variety of industrial applications.
The module is composed of an IGBT and three diodes, arranged in a three-phase, insulated gate bipolar transistor (IGBT) module. The module is designed to use low-voltage gate drive signals to control high-voltage and high-current power applications. The power and control components are built on a waterproof ceramic base, with passivated copper and aluminum nickel plated for corrosion protection. In addition, the module is equipped with a built-in thermal protection and monitoring system to ensure reliable operation.
Working Principle
The IGBT module works on the principle of voltage control. When a voltage is applied to the gate of the IGBT, the device is used to control the amount of current flowing through it. The IGBT has three internal components, a gate, emitter and collector. When the voltage is applied to the gate, electrons are attracted to it and form an electrical field which allows current to flow. The current is then collected by the collector and then released through the emitter. Since the voltage is the only control signal applied, the control signal is digital.
The IGBT is a type of power circuit device that uses insulated gate bipolar transistor technology to control current flow. It is ideal for high-power applications like motor drives, inverters, and switchgear. Compared to conventional devices, IGBTs are typically more efficient, allowing for better power stability and lower switching noise. As a result, IGBTs are used in devices that require fast switching, such as solar inverters, variable frequency drives, and electric welding systems.
Application Fields
The GSID600A120S4B1 is a popular IGBT module used in high power applications such as motor drives, servo drives, motor control systems, AC/DC inverters and electric welding machines. It can also be used in applications such as solar inverters, variable frequency drives, lighting systems, industrial automation, and variable speed drives. The module is suitable for a wide range of voltage and current ratings and is capable of operating at frequencies up to 5kHz.
Due to its high performance, reliability and stability, the GSID600A120S4B1 is widely used in various industries such as renewable energy, automotive, healthcare and aerospace. The module is also widely used in consumer electronics, power supplies, motor control systems and motor drives. The combination of its rugged construction, superior performance and cost-effectiveness make it an ideal choice for a variety of industrial and commercial applications.