Allicdata Part #: | GSID150A120T2C1-ND |
Manufacturer Part#: |
GSID150A120T2C1 |
Price: | $ 119.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | SILICON IGBT MODULES |
More Detail: | IGBT Module Three Phase Inverter 1200V 285A 1087W... |
DataSheet: | GSID150A120T2C1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 108.23200 |
Series: | Amp+™ |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 285A |
Power - Max: | 1087W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 21.2nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The GSID150A120T2C1 is an IGBT module and an essential part of many electronic circuits. It has a wide range of applications and is used in devices from consumer electronics to defense applications. The GSID150A120T2C1 is known for its high current capacity, fast response time, and high frequency operation. It is a key component for controlling the flow of current and voltage in many electronic devices.
In its most basic configuration, an IGBT module consists of an output shoulder region, an emitter, a gate, and a collector. This configuration allows the device to control the flow of current and voltage by allowing or restricting the flow of electrons as they pass through the output shoulder region. The GSID150A120T2C1 IGBT module has an output shoulder region of 150A and a collector voltage of 120V. The maximum current capacity can reach up to 1,320A.
The IGBT module\'s main application fields depend on its current and voltage ratings. With a maximum output current of 1,320A and a collector voltage of 120V, the GSID150A120T2C1 is used in many of the same applications as power MOSFETs and IGBTs, including power conversion, motor drive systems, and inverters. The device\'s fast switching speed is also essential for high frequency applications like PLCs, digital signal processing, and radio frequency amplifiers, to name a few.
The GSID150A120T2C1 IGBT module works in a similar manner to power MOSFETs and IGBTs but with a few critical differences. The amount of current allowed to flow through the output shoulder region is determined by the applied voltage between the gate and the emitter. When a positive voltage is applied, the number of electrons in the output shoulder region is increased, allowing more current to flow. Conversely, when negative voltage is applied, the number of electrons decreases, resulting in lower current flow.
The IGBT module also has a built-in protection circuit to prevent excess current from passing through the output shoulder region. This thermal shutdown feature will automatically open the IGBT module if the heating due to the high current exceeds a certain threshold. The built-in protection feature makes the IGBT module a much safer and more reliable choice than power MOSFETs and IGBTs.
The GSID150A120T2C1 IGBT module is an important part of many electronic circuits, especially in applications where current control and speed are paramount. It\'s highly versatile, allowing for a range of current and voltage ratings, making it a perfect choice for a variety of devices. With its built-in protection circuit, the GSID150A120T2C1 is a reliable, secure, and well-rounded option for many different applications.
The specific data is subject to PDF, and the above content is for reference
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