GSID100A120T2C1A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GSID100A120T2C1A is a type of Insulated Gate Bipolar Transistor (IGBT) module developed by General Electric. It is a type of semiconductor device that works with both high voltage and low voltage. It is typically used in power applications that require high efficiency and high power density, such as solar, wind, electric vehicles, and many other applications. This article will discuss the application fields and working principle of GSID100A120T2C1A.

The GSID100A120T2C1A is a non-isolated, three-phase inverter module. It can be used in both a 3-HV (high voltage) and Low voltage (LV) topology, and can be connected in parallel to increase the power of the inverter. The GSID100A120T2C1A has a rated current of 100A, and a maximum RMS current of 120A. It is compatible with standard two-level inverters and can reach high switching frequencies (33kHz). The module has an operating temperature of -40°C to 125°C, and a maximum junction temperature of 150°C. The main applications of GSID100A120T2C1A are inverters for renewable energy and electric vehicle applications.

The GSID100A120T2C1A is a standard IGBT module, with an internal module consisting of 16 IGBT cells in series. The module also contains 16 diode cells, which are also connected in series. There are four terminal pins, which control the IGBT switching operation. The GSID100A120T2C1A uses a combined driver and DC link section, which is optimized for high efficiency and high power density the DC link voltage is rectified from the AC power supply. A power factor correction (PFC) circuit is also incorporated into the unit, which optimizes the input power consumption and boosts the power efficiency.

The GSID100A120T2C1A module uses an insulated gate bipolar transistor (IGBT) to control each switching cell. An IGBT is a voltage-controlled bipolar transistor that combines the benefits of both the bipolar transistor (high speed and low power dissipation) and the MOSFET (low on-state voltage drop). The IGBT is a three-terminal device, with the gate, collector and emitter leads. When the gate voltage is above the threshold voltage (usually in the range of 6 V to 8 V), the IGBT is turned on and conducts current from the collector to the emitter. When the gate voltage is below the threshold voltage, the IGBT is turned off and does not allow current to flow.

In the GSID100A120T2C1A module, the output current is regulated by the IGBT cells. The IGBT cells connected in series limit the current by conducting when the gate voltage is applied, and blocking when it is not. The module also contains the diode cells, which are used to provide commutation (synchronized current reversal), when the IGBTs are switched off. The module\'s power factor correction (PFC) circuitry is also optimized for improved efficiency.

The GSID100A120T2C1A is a versatile IGBT module, which can be used in a variety of applications. It is a high efficiency and high power density solution, which is ideal for renewable energy and electric vehicle applications. The module can be connected in parallel to increase the power of the inverter, and its PFC circuitry is optimized for improved efficiency. In addition, the IGBT cells of the module provide efficient current regulation, and the diode cells provide commutation for current reversal. The module is reliable and has a long lifetime, with an operating temperature range of -40°C to 125°C, and a maximum junction temperature of 150°C.

The specific data is subject to PDF, and the above content is for reference