Allicdata Part #: | 819293-ND |
Manufacturer Part#: |
GT28F160C3TA110 |
Price: | $ 3.42 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intel |
Short Description: | IC FLASH 16M PARALLEL 48UBGA CSP |
More Detail: | FLASH - Boot Block Memory IC 16Mb (1M x 16) Parall... |
DataSheet: | GT28F160C3TA110 Datasheet/PDF |
Quantity: | 78 |
1 +: | $ 3.10590 |
10 +: | $ 2.81610 |
25 +: | $ 2.75512 |
50 +: | $ 2.73987 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - Boot Block |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-µBGA CSP |
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GT28F160C3TA110, also known as 28F160C3, is a type of embedded Flash memory, or EEPROM, designed and produced by Macronix. It is a high-performance non-volatile memory that offers versatile storage options, high-end performance and low-power consumption. The 28F160C3 is an ideal solution for a wide variety of applications, ranging from automotive, industrial, medical and military to consumer electronics.
The GT28F160C3TA110 addresses the needs of applications requiring faster read/write access, longer battery life operation, and greater storage capacity. This device provides a wider range of operational power supply voltages than traditional discrete EEPROM. It also provides advanced features such as enhanced write endurance, Dual-Ready Programming & Erase functions, Self-Refresh capabilities and more.
As an embedded Flash memory device, the GT28F160C3TA110 utilises a state-of-the-art CMOS process technology. It is a stand-alone memory device that can be easily integrated into system designs, typically used as a Primary Memory. The device is offered in two user-selectable temperature grades: Commercial (working temperature range between 0 and +70 oC) and Industrial (working temperature range between -40 and +85 oC).
GT28F160C3TA110 offers excellent level of performance, with read speeds of up to 100MB/s, write speeds of up to 35MB/s, and erase speeds of up to 10MB/s. It also boasts fast write cycles at an achievable and repeatable 0.5us write time with a wide address and data bus width. These features make the 28F160C3 highly suitable for high-speed storage applications.
The GT28F160C3TA110 features a 4GB of storage capacity that can store up to 160 million bytes (or 19 million 16-bit words) per chip. The device is organised into blocks of 16KB each, with a total of 128 blocks. Each block can be written and erased individually. This allows for a very flexible and efficient file system for applications requiring a large amount of data.
The working principle of the GT28F160C3TA110 is simple yet effective. As with all Flash memory devices, the 28F160C3 uses a transistor-based technology to store information in the form of electrons stored on the gate of the transistor. The information can be stored on either the source or drain of the transistor, and is retained even when power is removed. Data is written to the device using an external bus, and read using the same bus.
The GT28F160C3TA110 provides an excellent solution for a wide range of applications, including automotive, industrial, medical and military systems, as well as consumer electronics. The device\'s high-end performance, low-power consumption, and versatile storage options make it an ideal choice for those looking for a reliable and powerful embedded memory solution.
The specific data is subject to PDF, and the above content is for reference
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