GT28F320C3BA110

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GT28F320C3BA110, also known as ON Semiconductor\'s Mira NVM (Non-Volatile Memory), is a semiconductor device that features both programmable non-volatile memory and high-speed parallel non-volatile memory. This is a cost-effective solution for consumer and industrial applications needing large memory capacities and low power consumption. The device offers versatile design options and a wide range of features such as error detection and correction, automatic data logging, data encryption, and enhanced built-in self tests. GT28F320C3BA110 is especially well-suited for high-speed, large-capacity application needs such asindustrial automation, automotive engine management, consumer electronics, medical computing, robotics, and factory automation.

GT28F320C3BA110 is a non-volatile memory device that combines both programmable memory and high-speed parallel non-volatile memory. It is based on Flash EEPROM technology and is manufactured using 120 nm process technology. The device provides a large capacity of up to 32 megabytes, making it ideal for storing large amounts of data. It also offers low power requirements, with an active current of less than 20 mA and an idle current of less than 0.5 mA. In addition, the device features built-in error detection and correction, automatic data logging, data encryption, and enhanced built-in self tests.

The GT28F320C3BA110 uses a NOR Flash cell for storage, which is based on the floating-gate technology. The device has two input/output latch registers which provide the interface between the NOR Flash cell and the processor. The two registers, Data In Register (DIR) and Data Out Register (DOR), store the data to be programmed and delivers the content of the flash cells to the outside world when requested. The device supports an asynchronous programming mode which allows write operations to be performed at lower speeds.

When writing data to the device a special bit-level sequencing known as page programming/erase is used; which first provides data to the DIR, then instructs the device to perform the page programming/erase operation. After this is complete the bits in the data register will become the content of the flash cells. The more address lines there are, the more bits can be stored at once. The device also supports a write protect feature, which can be used to prevent accidental overwrites or erases.

GT28F320C3BA110 is used in a variety of applications, ranging from industrial automation and automotive engine management to consumer electronics and communications products. The device is ideally suited for applications needing high-speed and large capacity storage, such as those used in factory automation and data logging, as well as applications requiring large memory space, such as robotics, medical computing, and automotive engine management. In addition, the device can be used for data storage, code protection, and even encryption in consumer electronics.

In conclusion, GT28F320C3BA110 is a versatile non-volatile memory device that combines programmable memory and high-speed parallel non-volatile memory. It is used in a variety of applications, including industrial automation, automotive engine management, consumer electronics, medical computing, robotics, and factory automation. Its features such as error detection and correction, automatic data logging, data encryption, and enhanced built-in self tests makes it an ideal solution for those needing large capacity storage and low power requirements.

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