GT28F320B3BA100 Allicdata Electronics
Allicdata Part #:

823191-ND

Manufacturer Part#:

GT28F320B3BA100

Price: $ 3.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intel
Short Description: IC FLASH 32M PARALLEL 48UBGA CSPFLASH - Boot Block...
More Detail: N/A
DataSheet: GT28F320B3BA100 datasheetGT28F320B3BA100 Datasheet/PDF
Quantity: 300
1 +: $ 3.33270
10 +: $ 3.13270
100 +: $ 2.71540
1000 +: $ 2.10220
10000 +: $ 1.19050
Stock 300Can Ship Immediately
$ 3.33
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - Boot Block
Memory Size: 32Mb (2M x 16)
Clock Frequency: --
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-µBGA CSP
Base Part Number: --
Description

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GT28F320B3BA100 is an integration device which combines non-volatile memory, SRAM memory and NVRAM which is widely used in many areas. It applies in memory applications, including aerospace, automotive, medical, military and mobile devices. The main feature of this product is that it combines the speed of SRAM with the non-volatile storage of NVRAM. Through the embedded power failure detection circuits, it is typically used in applications requiring data protection upon power disruption.

The GT28F320B3BA100 can be easily integrated into a wide variety of micro controllers and digital signal processors. It is available in a 64-pin plastic dual in-line package with an access time of 25ns for 8K x 8 SRAM and 20ns for 8K x 24 non-volatile memory. It provides efficient, high-performance memory capacity for a variety of designs. The NVRAM of the GT28F320B3BA100 can be used to store data that is not typically stored in SRAM such as program code, configuration settings and other frequently modified data.

The working mechanism of GT28F320B3BA100 relies on 3 parts. Firstly, when power is applied, the trigger circuit will detect the voltage level and start up the logic circuit, then the internal logic will activate the external peripheral devices via N channel MOSFETs. Secondly, when power is removed, the logic circuit will enter power saving mode and the SRAM will hold its content. Thirdly, when power is resumed, the logic circuit will return to normal operation. This will make sure that data stored in SRAM will not lose during a power failure.

The combination of SRAM and NVRAM enables the GT28F320B3BA100 to provide high performance and a reliable solution for any application requiring a large, non-volatile memory. Its flexible architecture allows it to be used in a variety of different designs. Its low power consumption and wide temperature range make it an attractive option for embedded applications or those with limited space. These features make the GT28F320B3BA100 excellent for storing critical data in mission-critical applications.

The integration of non-volatile memory and SRAM in the GT28F320B3BA100 make it a valuable tool for any memory focused application. Its combination of fast SRAM access times and efficient non-volatile memory usage make it ideal for designs requiring high performance, reliability, and data protection.

The specific data is subject to PDF, and the above content is for reference

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