GT28F320C3TA110 Integrated Circuits (ICs) |
|
Allicdata Part #: | 820978-ND |
Manufacturer Part#: |
GT28F320C3TA110 |
Price: | $ 3.67 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intel |
Short Description: | IC FLASH 32M PARALLEL 48UBGA CSP |
More Detail: | FLASH - Boot Block Memory IC 32Mb (2M x 16) Parall... |
DataSheet: | GT28F320C3TA110 Datasheet/PDF |
Quantity: | 265 |
1 +: | $ 3.33270 |
10 +: | $ 3.02337 |
25 +: | $ 2.95798 |
50 +: | $ 2.94147 |
100 +: | $ 2.63794 |
250 +: | $ 2.62811 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - Boot Block |
Memory Size: | 32Mb (2M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-µBGA CSP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the most important components in any computer system. It is used to store data and instructions, which are accessed and manipulated as needed. The GT28F320C3TA110 is a type of memory element that is used in embedded systems and other applications. This article looks at the application field and working principle of this memory type.
Application Field of GT28F320C3TA110
The GT28F320C3TA110 is a type of discrete memory device (also called non-volatile memory). It is based on MRAM (magnetic random access memory) technology, which is a non-volatile, fast, low-power memory type. Due to its non-volatility, it is used in applications such as aerospace, automotive, and industrial automation, where long-term storage is important. It is also ideal for applications that require a long storage life, low power consumption, and fast data access.
The GT28F320C3TA110 is available in a variety of form factors, including TSOP, SOIC, and QFP. It offers 32Mbit of storage capacity and is capable of storing data in both serial and parallel environments. It also offers high write endurance, making it suitable for systems that frequently write to the memory. The device offers a variety of features, including error correction code (ECC) and spread spectrum clocking (SSC).
Working Principle of GT28F320C3TA110
The working principle of the GT28F320C3TA110 can be understood by looking at its components and how they interact. At the heart of the device is an array of transistors, which are arranged in a way that can store a single bit of data. The transistors are then magnetically coupled with a magnetic film, which flips back and forth to represent the binary values of 1 and 0. This process is known as switching cycling, which is the heart of MRAM technology.
To write data to the memory, electrical current is applied to the memory cell, which generates a magnetic field. This magnetic field then interacts with the magnetic film, causing it to flip and store the data in its direction. To read the data, the information is then read by looking at the direction of the magnetic film. When the data is read, the direction of the film determines whether the information is a 0 or a 1.
In addition to its storage capabilities, the GT28F320C3TA110 also offers error correction code (ECC) for improved data integrity and spread spectrum clocking (SSC) to reduce radiated emissions. ECC enables the device to detect and correct errors in stored data, ensuring that the information is stored accurately. SSC reduces radiated emissions by reducing the electromagnetic interference created by the device.
The GT28F320C3TA110 is a type of discrete memory device that is used in embedded systems and other applications. It is based on MRAM technology and offers 32Mbit of storage capacity and high write endurance. The device also offers ECC and SSC for improved data integrity and reduced radiated emissions. It provides a fast, low-power memory type that is ideal for applications that require a long storage life, low power consumption, and fast data access.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GT28-2S-HU | Hirose Elect... | 0.37 $ | 50 | CONN HSG2 Position Rectan... |
GT28-1214SCF | Hirose Elect... | 0.19 $ | 1000 | CONN CTR TERM 12-14AWGSoc... |
GT28-2P/S-R | Hirose Elect... | 0.14 $ | 76 | CONN RETAINER |
GT28F160C3TA110 | Intel | 3.42 $ | 78 | IC FLASH 16M PARALLEL 48U... |
GT28F320B3BA100 | Intel | 3.67 $ | 50 | IC FLASH 32M PARALLEL 48U... |
GT28F320C3BA110 | Intel | 10.12 $ | 168 | IC FLASH 32M PARALLEL 48U... |
GT28F320B3TA110 | Intel | 3.67 $ | 285 | IC FLASH 32M PARALLEL 48U... |
GT28F320C3TA110 | Intel | 3.67 $ | 265 | IC FLASH 32M PARALLEL 48U... |
ZX-GT28S11 | Omron Automa... | 2.08 $ | 1000 | SENS SEP THRU-BEAM NPN,0-... |
ZX-GT28S41 | Omron Automa... | 2.08 $ | 1000 | SENS SEP THRU-BEAM PNP,0-... |
ZX-GT2840S11 | Omron Automa... | 2.08 $ | 1000 | SENS INTEGR THRU-BEAN NPN... |
ZX-GT2840S41 | Omron Automa... | 2.08 $ | 1000 | SENS INT THRU-BEAM PNP 40... |
GT28A-2022SCF | Hirose Elect... | 0.2 $ | 1000 | CONN SOCKET CENTER TERMIN... |
GT28WS-2/2P-HU | Hirose Elect... | 2.83 $ | 1000 | CONN COAX PLUG HSG INLINE |
GT28A-2P-6.5DS | Hirose Elect... | 1.87 $ | 1000 | CONN PIN HEADER R/A LOCK-... |
GT28WS-2/2S-HU | Hirose Elect... | 5.08 $ | 1000 | CONN INLINE SOCKET HOUSIN... |
GT28-4.2CF | Hirose Elect... | 0.15 $ | 1000 | OUTER TERMINAL CRIMP |
GT28-1214PCF | Hirose Elect... | 0.18 $ | 1000 | CONN PLUG CENTER TERMINAL... |
AP105-GT28-1214P(63) | Hirose Elect... | 63.6 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(61) | Hirose Elect... | 90.99 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(64) | Hirose Elect... | 82.44 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(61) | Hirose Elect... | 141.44 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(64) | Hirose Elect... | 125.22 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(64) | Hirose Elect... | 127.93 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(90) | Hirose Elect... | 232.02 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(90) | Hirose Elect... | 232.02 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(63) | Hirose Elect... | 99.1 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(63) | Hirose Elect... | 99.1 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(65) | Hirose Elect... | 105.41 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(90) | Hirose Elect... | 149.31 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(65) | Hirose Elect... | 163.96 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(65) | Hirose Elect... | 163.96 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(62) | Hirose Elect... | 166.67 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(62) | Hirose Elect... | 111.71 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(66) | Hirose Elect... | 115.32 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(66) | Hirose Elect... | 115.32 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28A-2022S(61) | Hirose Elect... | 168.47 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214S(62) | Hirose Elect... | 173.87 $ | 1000 | TOOL PRESS APPLICATOR |
AP105-GT28-1214P(66) | Hirose Elect... | 74.33 $ | 1000 | TOOL PRESS APPLICATOR |
GT28-2P-6.5DSA | Hirose Elect... | 1.51 $ | 118 | CONN 2POSConnector Header... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...