GT28F320C3BA100SB93

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - Boot Block
Memory Size:	32Mb (2M x 16)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-VFBGA
Supplier Device Package:	48-µBGA CSP

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Memory: GT28F320C3BA100SB93 Application Field and Working PrincipleThe GT28F320C3BA100SB93 is a specialized memory chip designed to provide high-speed storage and improved performance in a wide range of applications. It was designed by the company STMicroelectronics, a leading global provider of analog, mixed-signal, system-on-chip, and memory products.The GT28F320C3BA100SB93 is a 3V 32M-bit Mask ROM device. It features a fast zero-power random-access memory (SRAM), with an access time of 25ns. It has a low power consumption of approximately 1uA for its standby mode, making it an ideal choice for applications where power efficiency is critical.The chip offers an extended temperature range of -40 to +125 degrees Celsius and can be used in wide range of portable devices and power-sensitive applications. The device is especially suited for automotive applications, such as in-car infotainment systems, dashboards and navigation systems.The chip is pin-compatible with the well-known 28-pin SO8 package. It also enables extra bus width for memory intensive applications or larger data storage capacity. The chip also has an error correcting code that makes it resistant to common data corruption errors.The chip features a low-power standby of only 1uA and an improved fast-read capability of 33MHz, making it ideal for applications that require a high-speed storage solution. It is available in various package sizes ranging from 64K to 512K.The core of the chip is an improved 32Mb asynchronous SRAM based on the 64 row architecture. It features a fast zero-power random-access memory, with an access time of 25ns. The device also features a single-port asynchronous control and on-chip data buffering.Additionally, the device has a device-programmable architecture for user-defined memory configurations that allow for optimized memory solutions. The chip also has a split-level addressing scheme, which allows for fast access times and increased system efficiency.The GT28F320C3BA100SB93 is an ideal choice for data intensive applications, with its high performance and low power. It is a versatile memory solution for a variety of applications, from automotive to consumer electronics.

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