GTVA261701FA-V1-R2

The GTVA261701FA-V1-R2 is a high-performance, low Noise Amplifier (LNA) designed specifically for wireless applications. It is a Field Effect Transistor (FET) that uses a combination of Metal Oxide Semiconductor (MOSFET) and Junction Field Effect Transistor (JFET) technologies to achieve superior performance in terms of low input noise, high gain, low power consumption, and wide bandwidth. In this article, we will discuss the application field and working principle of the GTVA261701FA-V1-R2.The GTVA261701FA-V1-R2 is primarily used in wireless communication systems. It can be used as an amplifier for high-frequency signals for applications such as Bluetooth, WLAN, radar, and ultra-wideband transmissions. The device is also suitable for Ultra High-Definition television (UHDTV) reception, digital satellite television (DST), digital video broadcasting (DVB), and digital audio broadcasting (DAB) applications.The GTVA261701FA-V1-R2 is a GaAs FET fabricated using a combination of Metal Oxide Semiconductor (MOSFET) and Junction Field Effect Transistor (JFET) technologies. It has been designed to have a wide-bandwidth of 2-14GHz, a high gain with a low Noise figure of 0.86dB, and a low-input reflection coefficient of less than -10dB.The GTVA261701FA-V1-R2 works by amplifying an input signal applied to the gate. The gate is connected to the gate of the MOSFET and the drain is connected to the source. As an input signal is applied to the gate, a voltage drop is created between the drain and the source. This voltage drop however, is limited due to the size of the insulating layer around the gate. The voltage drop causes an electric current to flow through the drain-source channel. This current is amplified and then output at the drain.The combination of MOSFET and JFET technologies enables the GTVA261701FA-V1-R2 to achieve low noise and low power consumption. The MOSFET provides a low input impedance, which reduces noise and improves gain stability. The JFET provides low capacitance between the gate and the drain, which helps to reduce noise and power consumption. This reduces the noise floor of the amplifier, enabling it to amplify weak signals with minimal distortion.The GTVA261701FA-V1-R2 is a reliable, high-performance amplifier with low noise, high gain, and low power consumption. It is well-suited for a wide range of wireless applications, including UHDTV and DST reception, Bluetooth and WLAN, and ultra-wideband transmission. Additionally, its combination of Metal Oxide Semiconductor (MOSFET) and Junction Field Effect Transistor (JFET) technologies ensure low noise and low power consumption, making it an attractive choice for designers.

GTVA220701FA-V1-R2	Cree/Wolfspe...	58.71 $	1000	GAN SICRF Mosfet
GTVA261701FA-V1-R2	Cree/Wolfspe...	88.36 $	1000	GAN SICRF Mosfet
GTVA261701FA-V1-R0	Cree/Wolfspe...	102.49 $	1000	GAN SICRF Mosfet