HGTP10N120BN Discrete Semiconductor Products |
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Allicdata Part #: | HGTP10N120BNFS-ND |
Manufacturer Part#: |
HGTP10N120BN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 35A 298W TO220AB |
More Detail: | IGBT NPT 1200V 35A 298W Through Hole TO-220AB |
DataSheet: | HGTP10N120BN Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 298W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 960V, 10A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/165ns |
Gate Charge: | 100nC |
Input Type: | Standard |
Switching Energy: | 320µJ (on), 800µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 35A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The HGTP10N120BN is a single IGBT (insulated gate bipolar transistor) that is used mainly in motor control and other related applications. It is primarily used to switch large currents in electric machines. The HGTP10N120BN is a ‘high-speed’ IGBT, meaning it can switch the current faster than conventional IGBTs. This makes it perfect for applications where speed and efficiency are key.
The HGTP10N120BN has an integrated anti-parallel diode which helps to dampen voltage spikes generated during the IGBT’s operation. This diode also helps to reduce switching losses and improve the overall efficiency of the device. Furthermore, the HGTP10N120BN has a wide voltage range of 800V and a current rating of 10A. The IGBT also includes a fast turn-off feature which reduces the duration of the switching losses and increases the efficiency of the power drive.
The working principle of the HGTP10N120BN is the same as other IGBTs. In short, it works like a fast switching switch between the collector and the emitter. When the circuit is off, the electrons flowing from the collector to the emitter are blocked by the gate, preventing any current from flowing. When the circuit is switched on, the gate is opened and the electrons can flow freely from the collector to the emitter. This, in turn, allows for a rapid switching of the current.
In terms of its application field, the HGTP10N120BN is used mainly in motor control. This is due to its high current handling capabilities and its fast switching capability, making it ideal for applications where speed and efficiency are key. In addition to motor control, the HGTP10N120BN can also be used in other applications, such as in power supplies, convertors, inverters and UPS systems.
Overall, the HGTP10N120BN is a powerful and reliable IGBT that is suitable for a variety of applications. It offers high current handling capabilities and fast switching times, making it perfect for motor control and other applications. In addition, it includes an integrated diode to dampen voltage spikes, as well as a wide voltage rating and fast turn-off feature, making it very capable in a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
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