HGTP12N60A4D

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HGTP12N60A4D is a state-of-the-art IGBT from ON Semiconductor. It is designed for low on-state conduction losses, efficient switching, and ruggedness. It is capable of higher current, higher speed, and higher voltage switching than any other discrete IGBT.

As an IGBT, the HGTP12N60A4D operates according to a unique principle. It is essentially a combination of a MOSFET and a BJT. The MOSFET portion stops current flow when a control signal is applied, while the BJT part handles the high voltage current flow. This enables the IGBT to be more reliable and efficient than either of those devices on their own.

The HGTP12N60A4D has various applications in power electronics. It is used in general electric motor control, welding, and variable-speed drive systems applications. It can also be utilized in home and factory automation cooking. These applications are accomplished by providing fast switching times and eliminating unnecessary power consumption, thereby reducing energy costs.

The HGTP12N60A4D is a 3-phase device with a nominal current rating of 60A. The maximum voltage rating for the IGBT is 600V. It has a low on-state voltage of 1.35V and is ESD-protected for up to 8kV. The device has a maximum on-state current drop of only 1.25V at 10kHz, meaning it is able to operate at high speed with minimal losses.

Furthermore, the HGTP12N60A4D is a high-current device that can be used in high-power applications such as induction heating, motor drives, and high-power lighting. The device offers long term reliability and rugged operation over a wide range of temperatures. It also has low parasitics and an average gate current of 700mA, meaning power dissipation is kept at a minimum.

To conclude, the HGTP12N60A4D is a state-of-the-art IGBT from ON Semiconductor. It has various applications in power electronics, offering fast switching times and eliminating unnecessary power consumption. It is a high-current device that can be used in high-power applications such as induction heating, motor drives, and high-power lighting. The device also has a low on-state voltage of 1.35V and is ESD-protected for up to 8kV. These features make the HGTP12N60A4D a reliable and efficient IGBT for a variety of applications.

The specific data is subject to PDF, and the above content is for reference