HGTP2N120CN Discrete Semiconductor Products |
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Allicdata Part #: | HGTP2N120CN-ND |
Manufacturer Part#: |
HGTP2N120CN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 13A 104W TO220AB |
More Detail: | IGBT NPT 1200V 13A 104W Through Hole TO-220AB |
DataSheet: | HGTP2N120CN Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 104W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 960V, 2.6A, 51 Ohm, 15V |
Td (on/off) @ 25°C: | 25ns/205ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Switching Energy: | 96µJ (on), 355µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 2.6A |
Current - Collector Pulsed (Icm): | 20A |
Current - Collector (Ic) (Max): | 13A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HGTP2N120CN is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in various applications and industries from consumer electronics to renewable energy fields. IGBTs are well-known for providing a reliable current flow with adjustable parameters and allowing for soft switching for high-power waveforms. The HGTP2N120CN is one type of single IGBT module and it has several usages and applications, as well as has its own working principle.
When considered from an industrial usage perspective, the HGTP2N120CN is designed for medium and high power applications. Examples of the applications include solar, wind, motor drives, welding and rectifying, UPS and power supplies, and AC/DC inverters. In all of these uses, the stability and performance of the IGBT module are key considerations. In addition, the module is designed to preserve energy in high frequency conversion of electric power, providing efficiency savings to the user.
For the renewable energy market, the HGTP2N120CN can be used in both solar and wind energy applications. For example, the module is suitable for high-voltage applications in the solar PV industry, where it can be used to convert DC input into AC output. Similarly, in high-frequency conversion, the IGBT module is capable of reducing harmonic generated from switching. This reduces energy waste and improves PV cell efficiency.
In motor drives, the module can be utilized to regulate and control current flow, as well as to act as a power switch when switching between various functions. Further, in welding and rectifying, the IGBT offers the ability to control current and voltage parameters with adjustable parameters, and it also provides soft switching capability for high-power waveforms.
The HGTP2N120CN can also be used in uninterruptible power supplies (UPS) and power supplies as well. With the IGBT module, a user can can quickly switch between different power sources while providing stable and reliable current flow. Further, the module can enable automatic battery charging and enable more efficient current flow when connecting other types of power sources.
The HGTP2N120CN IGBT module is also suitable for various AC/DC inverter applications, such as those used for solar energy or wind turbines. With this module, the alternate current generated can be converted into direct current, which can be used to power various types of electric motors and other electrical devices. The module is also capable of providing a stable current in these applications.
When considering the working principles of an IGBT, the HGTP2N120CN module can be viewed as a combination of both a MOSFET transistor and a bipolar transistor. The IGBT acts as a switch and has three terminals-gate, anode, and cathode. When a potential is applied to the gate, the MOSFET transistor turns on, allowing current to flow from the anode to the cathode.
Also, when voltage is applied to the gate, the channel created between the anode and cathode increases, allowing for high current flow. The bipolar characteristics of the IGBT also allow for the medium and high operating voltages, which is why the HGTP2N120CN is suitable for various medium and high power applications.
In conclusion, the HGTP2N120CN is a single IGBT module with a variety of usages and applications, from consumer electronics to renewable energy fields. The module has several advantages, from its stability and performance to its ability to preserve energy in high frequency conversions. The working principles of the IGBT module are based on the combination of both a MOSFET transistor and a bipolar transistor, providing a reliable and adjustable current flow.
The specific data is subject to PDF, and the above content is for reference
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