HGTP7N60A4-F102 Discrete Semiconductor Products |
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| Allicdata Part #: | HGTP7N60A4-F102-ND |
| Manufacturer Part#: |
HGTP7N60A4-F102 |
| Price: | $ 1.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | N-CH / 7A 600V SMPS 1 IGBT |
| More Detail: | IGBT 600V 34A 125W Through Hole TO-220-3 |
| DataSheet: | HGTP7N60A4-F102 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 800 +: | $ 0.98050 |
| Power - Max: | 125W |
| Supplier Device Package: | TO-220-3 |
| Package / Case: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 390V, 7A, 25 Ohm, 15V |
| Td (on/off) @ 25°C: | 11ns/100ns |
| Gate Charge: | 60nC |
| Input Type: | Standard |
| Switching Energy: | 55µJ (on), 150µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 7A |
| Current - Collector Pulsed (Icm): | 56A |
| Current - Collector (Ic) (Max): | 34A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | -- |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
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HGTP7N60A4-F102 is a part of the 600V family of MOS Gate Turn-Off (GTO) Thyristors from StMicroelectronics. This device is a three-terminal, high current electronic switch capable of operating at frequencies up to three Kilohz with switching losses not exceeding 2.5 Watts. It is commonly used in applications requiring high power efficiency, such as medium-voltage industrial motor drives and adjustable-speed motor drives.
The salient features of HGTP7N60A4-F102 are as follows:
- Thermal Resistance: 175° C/W
- Continuous Drain Current: 20A
- Peak Repetitive Drain Current: 40A
- On Resistance (Rdson): 8.0mOhms
- Gate Trigger Current: 1.0A
- Breakdown Voltage: 600V
- Input Capacitance: 580pF
HGTP7N60A4-F102 is a high-power electronic switching device consisting of two isolated N-Channel MOSFETs. It has three terminals: an anode, cathode, and gate. The anode and cathode of the device is connected to its respective DC load, and the gate is connected to the driver circuit. The device is designed to be used in circuits requiring high-power efficiency and fast switching times, so it is able to deliver a high output current with minimal switching losses. The device is also designed to be extremely reliable, with a very low risk of failure due to its efficient thermal design.
When VG is applied to the gate of HGTP7N60A4-F102, the electrons from the source are attracted to the drain and a charge-balanced channel is formed between the source and drain. This channel is used to conduct current from source to drain, and thus, it forms the basis of the device’s switching action. When the voltage at the gate decreases, the electron movement from source to drain stops and the conduction is stopped.
Since HGTP7N60A4-F102 is capable of operating at high frequencies, it is useful in a variety of applications including AC motor drives, power supplies, and adjustable speed drives. In motor drives, it is used in the motor control circuit to control the speed of the motor by controlling the current flow through the motor. In power supplies, it is used to control the current to the load and provide a stable power output. In adjustable speed drives, it is used to adjust the speed and the torque of the motor.
Overall, HGTP7N60A4-F102 is a high-power electronic switching device capable of operating at high frequencies and providing stable, efficient performance. It is ideal for applications requiring high-power efficiency and fast switching times, such as medium-voltage industrial motor drives and adjustable-speed motor drives.
The specific data is subject to PDF, and the above content is for reference
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HGTP7N60A4-F102 Datasheet/PDF