HMC408LP3E Allicdata Electronics
Allicdata Part #:

1127-1370-ND

Manufacturer Part#:

HMC408LP3E

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC PWR AMP HBT 1W 16-QFN
More Detail: RF Amplifier IC HiperLAN, UNII 5.1GHz ~ 5.9GHz 16-...
DataSheet: HMC408LP3E datasheetHMC408LP3E Datasheet/PDF
Quantity: 438
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 438Can Ship Immediately
Specifications
Series: --
Packaging: Cut Strip
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 5.1GHz ~ 5.9GHz
P1dB: 30dBm
Gain: 20dB
Noise Figure: 6dB
RF Type: HiperLAN, UNII
Voltage - Supply: 5V
Current - Supply: 750mA
Test Frequency: 5.8GHz
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-SMT (3x3)
Description

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RF amplifiers are popular in many different types of applications due to their high gain and wide band width performance. The HMC408LP3E has become one of the most preferred amplifier solutions due to its superior performance. The HMC408LP3E is a low cost, high performance amplifier designed for use in RF applications up to 3 GHz.

The HMC408LP3E offers many benefits such as high dynamic range, low noise, and high gain. It is an ideal solution for a range of RF amplifier applications such as cellular base station, wireless infrastructure, microwave radio, and commercial communication. The amplifier is also compatible with industry standard communications protocols such as 802.11, UMTS, GSM, and Globalstar.

The HMC408LP3E application field includes cellular systems, wireless communications, satellite communications, radar and test instrumentation. The amplifier also offers excellent linearity over its wide operating frequency range of 0.15 to 3 GHz. The gain of the amplifier is 45 dB with a noise figure of 2.5 dB. The amplifier also features a power output of 21 dBm with an operating temperature range of -40 to +85°C.

The working principle of the HMC408LP3E is based on high performance InGaP×HBT technology. The amplifier has a three stage design and is comprised of three transistors connected in cascade. The input transistor is connected to the output transistor, and the output transistor is connected to the emitter follower transistor. The input stage is designed to match to 50 ohm source and load impedances. The output stage consists of a high speed capacitive feedback design which provides good linearity and high performance across the operating frequency range.

The HMC408LP3E is designed to operate from a single +5V supply and is able to withstand supply voltage transients. The amplifier also features low power consumption, low distortion, and wide bandwidth. In addition, the HMC408LP3E is easy to use with no external components except for ac-coupling capacitors connected to the DC bias circuit. The amplifier is available in a 4x4mm, 24-pin QFN package.

The HMC408LP3E is a versatile and reliable high performance amplifier solution. Its superior performance makes it an ideal choice for many RF amplifier applications such as cellular base station, wireless infrastructure, microwave radio, and commercial communication. The amplifier is designed for operation up to 3 GHz and has excellent features such as low noise, wide band width, high gain, and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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