HMC442 RF/IF and RFID |
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Allicdata Part #: | 1127-3465-ND |
Manufacturer Part#: |
HMC442 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC PWR AMP DIE |
More Detail: | RF Amplifier IC VSAT 17.5GHz ~ 25.5GHz Die |
DataSheet: | HMC442 Datasheet/PDF |
Quantity: | 150 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 17.5GHz ~ 25.5GHz |
P1dB: | 22dBm |
Gain: | 16dB |
Noise Figure: | 6.5dB |
RF Type: | VSAT |
Voltage - Supply: | 5V |
Current - Supply: | 85mA |
Test Frequency: | 17.5GHz ~ 21GHz |
Package / Case: | Die |
Supplier Device Package: | Die |
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HMC442 is a cassette-mounted gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) designed for broadband amplifiers in the receive path for wireless applications and high dynamic range applications. The HMC442 can also be used in the transmit path for cellular, cordless, and satellite communications. The circuit is fabricated on a hybrid module consisting of a GaAs FET, an integrated passive device (IPD), and a resistive termination network on an R-type printed circuit board (PCB).
The main application field of the HMC442 is in radio frequency (RF) amplifiers. It is especially suitable for high-dynamic-range amplifiers. The circuit can provide 23 dB gain over an operating bandwidth from DC to 12.4 GHz, with a maximum input return loss of 8 dB. It provides 8 dB of noise figure over the same frequency range. The gain and noise figure of the amplifier are both very stable with frequency. There is also an excellent second- and third-order intercept point performance. The maximum power output of the amplifier is 5 W.
The HMC442 consists of two single-stage RF amplifiers that operate together to form a broadband amplifier. Each amplifier consists of a differential field-effect transistor (FET) with an integrated passive device (IPD) terminal. The two amplifiers are cascaded and combined together and driven by a single input signal. The FETs form two parallel pairs of small signal amplifiers. The IPDs are used to match the interstage impedance of each of the amplifiers. The resistive termination network (RTN) is used to match the source and load impedance, which ensure the maximum gain of the amplifier.
The HMC442 provides excellent linearity and low noise figure due to its design. It uses a low-noise FET and cascaded amplifier design to provide good noise figure performance. The gain of the amplifier is controlled by resistance bias networks which can be adjusted as needed for specific application requirements. The amplifier also features excellent harmonic and intermodulation distortion performance, making it an excellent choice for high dynamic range applications.
The HMC442 is an ideal choice for high dynamic range applications. With its wide frequency range, low noise figure, good linearity, and excellent harmonic and intermodulation distortion performance, the HMC442 can be used in many different wireless communication systems. It is an ideal choice for applications such as cellular, cordless, and satellite communications.
The specific data is subject to PDF, and the above content is for reference
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