HMC481ST89

Series:	--
Packaging:	Cut Strip
Part Status:	Obsolete
Frequency:	0Hz ~ 5GHz
P1dB:	19dBm
Gain:	20dB
Noise Figure:	3.5dB ~ 4dB
RF Type:	General Purpose
Voltage - Supply:	6 V ~ 12 V
Current - Supply:	79mA
Test Frequency:	--
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89
Base Part Number:	HMC481

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Introduction

HMC481ST89 is a high power, broadband RF amplifier designed to help boost signal power of signals over a wide frequency range. It is one of the few devices that is capable of providing amplification up to 100 watts of power across frequencies from 540 to 2500 MHz. It is suitable for use in test and instrumentation applications, broadcasting and public address systems, base station amplifiers, satellite communication systems, and other applications where high power and wide frequency band operation is required.

Application Field

HMC481ST89 can be used in a variety of RF communication applications. It is ideal for broadcast and public address systems, as its high power output makes it capable of providing reliable and consistent signal power to large numbers of receivers. This makes it ideal for long-distance communication networks, ensuring the transmission is as low-noise and clear as possible.Additionally, it can be used in base station amplifiers and satellite communication systems. The device is capable of providing the necessary level of gain and linearity required for these systems with its high-performance amplifiers and wide dynamic range.In addition, it can be used in test and instrumentation applications. The device can be used to accurately measure and test signals for integrity, giving engineers and technicians visibility into the status of their equipment.

Working Principle

The HMC481ST89 is a broadband RF amplifier relying on a pair of complementary Lateral N-Type Metal Oxide Field Effect Transistors (LN-MOSFETs) to amplify signals within the specified frequency range. It works by using an input amplifier stage to amplify the input signal. This amplifier then passes the signal to a gain stage, which amplifies the signal by a specific factor. The gain stage also ensures that the output signal is linear and has low levels of distortion. The output stage of the device amplifies the signal even further, boosting the power output of the device to 100 watts. It also compensates for any excess noise that might enter the system. To ensure the maximum power efficiency, the device employs an active bias control circuit which maintains the optimal bias conditions on the amplifier’s output stage. The control circuit also reduces the power consumption of the device, making it more power-efficient compared to similar amplifiers.

Conclusion

The HMC481ST89 is a high power, broadband RF amplifier capable of providing up to 100 watts of power across frequencies from 540 to 2500 MHz. Its wide frequency range and high power output make it suitable for a variety of applications, including broadcasting and public address systems, base station amplifiers, satellite communication systems, and test and instrumentation applications. The device works by using a pair of complementary Lateral N-Type Metal Oxide Field Effect Transistors (LN-MOSFETs) to amplify signals within the specified frequency range. It also employs an active bias control circuit to ensure maximum power efficiency and optimal bias conditions.

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