HMC8188ETR Allicdata Electronics
Allicdata Part #:

HMC8188ETR-ND

Manufacturer Part#:

HMC8188ETR

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC AMP MIXER
More Detail: RF Amplifier IC
DataSheet: HMC8188ETR datasheetHMC8188ETR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Base Part Number: HMC8188
Description

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RF amplifiers are electronic amplifiers used to amplify small signals to a larger magnitude. RF amplifiers vary greatly in terms of power output, frequency range, and linearity. They are critical components in many wireless systems, including cellular phones, satellite radio, GPS, and more. The HMC8188ETR is an example of an RF amplifier that offers excellent performance and reliability for a variety of wireless systems.

The HMC8188ETR is a high performance RF amplifier that provides ultra-wideband operation from 100 MHz to 6 GHz. With a rated output power of 28 dBm, it is suitable for a variety of applications. It features low current consumption and low noise floor, making it ideal for use in low-power, low-noise applications. The amplifier has excellent linearity and harmonic suppression for demanding communication and data links.

The HMC8188ETR can be used in a variety of applications, including cellular handsets, satellite communication systems, point-to-point communications systems, ISM and medical RF device applications, and Wi-Fi networks. It can also be used for in-building distributed antenna systems, base stations, two-way radios, and active antenna systems. In all of these applications, the HMC8188ETR offers excellent linearity and output power for increased performance.

The HMC8188ETR is a Class-AB amplifier that employs a biasing technique to improve efficiency and reduce power consumption. The amplifier consists of a driver stage, a power gain stage, an output match stage, and bias control circuitry. The driver and power gain stages use GaAs MESFET transistors in a cascode configuration to achieve a high level of linearity and low noise performance. The output match stage matches the output impedance of the amplifier to the load impedance. The bias control circuitry adjusts the bias current and voltage to maintain a high linearity over the operating temperature range.

In addition to the high linearity and wideband performance of the HMC8188ETR, it also features integrated protection features. These include power limiting, thermal shutdown, and circuit protection. The integrated protection features protect the amplifier from damage caused by extraneous conditions. The amplifier also meets all regulatory requirements for the intended application, making it an ideal component for any wireless system.

In summary, the HMC8188ETR RF amplifier is an excellent choice for a variety of applications. With its high linearity, wideband operation, low current consumption, and integrated protection features, the HMC8188ETR offers superior performance and reliability for wireless systems. The amplifier is suitable for use in cellular handsets, satellite communication systems, Wi-Fi networks, and more.

The specific data is subject to PDF, and the above content is for reference

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