HMC932LP4E

HMC932LP4E Application Field and Working Principle

The HMC932LP4E is a high performance microwave power amplifier targeted for the wireless infrastructure market. It is based on advanced gallium arsenide, pHEMT process technology and suitable for X- and Ku-band applications. HMC932LP4E Amplifier is of low cost and provides linear gain, high output power, low noise figure, low power consumption and exceptional reliability.

Application Field

The application field of HMC932LP4E covers many areas including base station, WLAN, Point-to-Point, high power amplifier, digital radio and so on. The power amplifier offers high linearity with very low distortion, low noise figure and high gain. It can be used in tower-top amplifiers as well as Point-to-Point radios. It also provides an optimum solution for WLAN applications such as 802.11a/b/g networks. Additionally, the amplifier can be used as a rack mounted amplifier in base station systems.

Working Principle

HMC932LP4E employs a unique patented GaAs pHEMT process technology which has excellent temperature and frequency characteristics for microwave applications. HMC932LP4E consists of an active input and active output amplifier and two transistor stages of degeneration. The DC gate voltages are individually tuned for optimum performance. It also utilizes a nominal group delay of 6 ns for fast transient response.

The amplifier operates in two stages: the Input Stage and the Output Stage. The Input Stage is responsible for amplifying the input signal. It consists of an active gain block which amplifies the input signal to a higher level. It also includes the active bias networks which sets the proper bias conditions for the device. The Output Stage is responsible for providing the output power required by the system. It also suppresses the undesired gain compression effects that result from the output power being generated from multiple devices.

The HMC932LP4E also utilizes a special voltage regulation technology which ensures constant, neutral noise across the operating range of the device. It is programmed by adjusting the voltage at each of its three points. The device is further protected by built-in short-circuit protection circuitry, over-input voltage protection and reverse polarity protection.

Features of HMC932LP4E

• Linear Gain: 15 dB Typical
• High Output Power: 33 dBm Typical
• Low Noise Figure: 2 dB Typical
• Low Power Consumption: 1.6 W Typical
• High Reliability: >1.2 Million Hours MTBF
• Runs on 12V Power Supply
• Operating temperature range: -40 to +85 C

The HMC932LP4E is an ideal solution for high power amplification in broadband wireless systems and provides excellent performance, reliability and power efficiency.