HMC903LP3E RF/IF and RFID |
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Allicdata Part #: | 1127-3039-ND |
Manufacturer Part#: |
HMC903LP3E |
Price: | $ 36.11 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC AMP MMIC GAAS LN 16QFNRF Amplifier IC General P... |
More Detail: | N/A |
DataSheet: | HMC903LP3E Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 36.11000 |
Series: | -- |
Packaging: | Cut Strip |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 6GHz ~ 17GHz |
P1dB: | 13dBm |
Gain: | 18dB |
Noise Figure: | 2.2dB |
RF Type: | General Purpose |
Voltage - Supply: | 3.5V |
Current - Supply: | 110mA |
Test Frequency: | -- |
Package / Case: | 16-VFQFN Exposed Pad |
Base Part Number: | -- |
Supplier Device Package: | 16-QFN (3x3) |
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The HMC903LP3E is an RF amplifier supplied in a miniature 3 mm x 3 mm 24-lead LGA package. It is part of the RF amplifier product family manufactured by Hittite Microwave Corporation, a world leader in RF and microwave technology. The HMC903LP3E is designed specifically for applications where high impedance, low noise, high linearity, and wide bandwidth performance are needed. It provides an excellent solution for cellular radio, Wi-Fi, and other wireless communications systems. The HMC903LP3E can also be used in SATCOM, radar, and test and measurement applications.This state-of-the-art RF amplifier operates over a frequency range of DC to 5 GHz. It features a low-noise figure of 1.8 dB, high-power gain of 16 dB, and excellent linearity of −44 dBm P1dB. The amplifier is available in three different gain steps that can be adjusted by the amplifier gain control pins. The amplifier is designed to operate on a single +5 V supply with power consumption of only 220 mW. The amplifier has an integrated low-noise high-output feedback circuit that provides high-performance gain and output power linearity.The HMC903LP3E utilizes a four-layer board design with low inductance components mounted on a ceramic/polymer multilayer package substrate as well as an improved RF performance. The device provides excellent thermal characteristics with its low thermal impedance of 1.8 °C/W. The device is also provided with a post mounted package, providing the users with an improved reverse isolation, match stability in varying temperatures, and superior Fourier stability at low frequencies.The HMC903LP3E’s working principle is based on the concept of Negative Feedback. It utilizes a single-stage differential amplifier to drive a signal into a feedback loop. The feedback loop then delivers feedback signals back to the differential amplifier, allowing the overall amplification to be adjusted. The high-powered gain achieved by the HMC903LP3E amplifier is due to the high feedback gain generated by the amplifier in combination with the high transconductance of the differential amplifier utilized in the design.The HMC903LP3E amplifier can be used in a wide variety of applications. It is an ideal solution for numerous RF amplification needs such as cellular radio, Wi-Fi, satellite communications, radar detection and test and measurement applications. It is also suitable for medium- and high-power transmit and receive applications due to its high gain and low noise figures. The low power consumption of this device makes it an efficient choice for energy-sensitive applications.The HMC903LP3E is a versatile and reliable solution that helps to reduce development time and costs while providing top-of-the-line performance. It features excellent gain and linearity performance, low-noise levels, and low power consumption, making it an ideal choice for various RF amplifier applications. With its combination of features, the HMC903LP3E is an excellent choice for developers and designers of RF amplifier solutions.
The specific data is subject to PDF, and the above content is for reference
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