Allicdata Part #: | 1127-2679-ND |
Manufacturer Part#: |
HMC906 |
Price: | $ 172.38 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC POWER AMP DIE 1=2PCSRF Amplifier IC VSAT, ... |
More Detail: | N/A |
DataSheet: | HMC906 Datasheet/PDF |
Quantity: | 1225 |
Lead Free Status / RoHS Status: | |
Moisture Sensitivity Level (MSL): |
1 +: | $ 172.38000 |
Series: | -- |
Packaging: | Tray |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 27.3GHz ~ 33.5GHz |
P1dB: | 33dBm |
Gain: | 23dB |
Noise Figure: | -- |
RF Type: | VSAT, DBS |
Voltage - Supply: | 6V |
Current - Supply: | 1.2A |
Test Frequency: | 27.3GHz ~ 31.5GHz |
Package / Case: | Die |
Base Part Number: | HMC906 |
Supplier Device Package: | Die |
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RF Amplifiers
HMC906 is a Ka-band low noise amplifier (LNA) designed for wireless communication systems. It is a high performance wideband module with excellent linearity, high gain, and low noise figure. This device is ideal for use in Ka-band communication systems as well as consumer electronics such as satellite TV receivers and Wi-Fi routers.
Application Field
HMC906 is used in many applications where a wide bandwidth and linearity is required. It is a great solution for applications such as radio astronomy, satellite systems, point-to-point (PTP) communication, VSAT systems, outdoor base stations, 5G networks, and more. This device has a wide frequency range of 20 – 40GHz and a maximum gain of 19.5 dB. It also has low noise figure of 48dBm, high intercept point of -51dBm, and high linearity with adjacent channel power ratio (ACPR) of better than 57dBc. Furthermore, HMC906 also supports both temperature stabilized voltage control and temperature stabilized current control modes.
Working Principle
HMC906 is a monolithic Ka-band LNA operating at DC-40GHz. It uses a three stage cascode architecture with a combination of GaAs PHEMT and pseudomorphic HEMT (PHEMT) technologies to achieve both wideband and high linearity performance. The GaAs PHEMT devices offer high gain and low noise while the proprietary design, with multiple emitter topologies, provide high linearity and reliable operation in a wide range of RF conditions.
The voltage gain of HMC906 is determined by the number of gain stages and the overall gain is typically 19.5 dB at 26GHz. To gain the required linear performance, the optimal control of the voltage supply is required. This can be done either by using a temperature stabilized voltage supply or by temperature stabilized current control. The device also features an advanced Class AB output stage for optimised harmonic performance.
HMC906 features an integrated RF synthesizer which is used as the reference for the voltage control loop. This ensures a stable low noise performance and high linearity as the device temperature varies. Moreover, it also offers a low power consumption capability and is an excellent choice for applications that require a low power budget.
Therefore, HMC906 is a versatile Ka-band low noise amplifier with wideband performance and excellent linearity. It is perfect for many wireless communication applications such as radio astronomy, satellite systems, 5G networks, and more.
The specific data is subject to PDF, and the above content is for reference
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